The development of high mobility emissive organic semiconductors is significant for advancing optoelectronic devices with simplified architecture and enhanced performance. The herringbone-packed structure is regarded as the ideal arrangement for simultaneously achieving high mobility and strong emission in organic semiconductors. However, it remains a great challenge that the relationship between molecular structure and optoelectronic property is still elusive. Herein, four quinoline-substituted anthracene isomers were designed and synthesized by introducing quinoline groups to anthracene core. Their intermolecular interactions and packing mode in the herringbone-packed structures were regularly tuning by subtle changing the nitrogen position on quinoline group, resulting in the superior integration of optoelectronic properties. Through a comprehensive analysis of aggregation states and optoelectronic properties, we revealed that in herringbone-packed aggregates, a centroid distance of approximately 7-7.5 Å along CH-π direction and 6-6.5 Å along π-π direction is beneficial for simultaneously achieving high mobility and strong emission. These properties are closely related to the molecular twist angles, which are influenced by intramolecular interactions. This structure-property relationship has been further validated in other herringbone-packed high mobility emissive organic semiconductors, demonstrating its broad applicability and universal potential. This work figures out the practical molecular design principle for high mobility emissive organic semiconductors.
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http://dx.doi.org/10.1002/anie.202419213 | DOI Listing |
Alzheimers Dement
December 2024
Emory University, Atlanta, GA, USA.
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January 2025
Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.
Ultrathin indium oxide films show great potential as channel materials of complementary metal oxide semiconductor back-end-of-line transistors due to their high carrier mobility, smooth surface, and low leakage current. However, it has severe thermal stability problems (unstable and negative threshold voltage shifts at high temperatures). In this paper, we clarified how the improved crystallinity of indium oxide by using ultrahigh-temperature rapid thermal O annealing could reduce donor-like defects and suppress thermal-induced defects, drastically enhancing thermal stability.
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December 2024
Johns Hopkins Bloomberg School of Public Health, Baltimore, MD, USA.
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December 2024
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