Active optical metasurfaces, capable of dynamically manipulating light in ultrathin form factors, enable novel interfaces between humans and technology. In such interfaces, soft materials bring many advantages based on their flexibility, compliance and large stimulus-driven responses. Here, we create electrochemically mutable, soft metasurfaces that capitalize on the swelling of soft conducting polymers to alter the shape and associated resonant response of metasurface elements. Such geometric tuning overcomes the typical trade-off between achieving substantial tuning and low optical loss that is intrinsic to dynamic metasurfaces relying on index tuning of materials. Using the commercial polymer PEDOT:PSS, we demonstrate dynamic, high-resolution colour tuning and high-diffraction-efficiency (>19%) beam-steering devices that operate at CMOS-compatible voltages (~1.5 V). These results highlight how the deformability of soft materials can enable a class of high-performance metasurfaces that are suitable for body-worn technologies.
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http://dx.doi.org/10.1038/s41563-024-02042-4 | DOI Listing |
Nat Mater
November 2024
Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, USA.
J Phys Chem Lett
December 2021
National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230026, China.
Electrocatalysis is recognized as a significant process for energy conversion. In fact, numerous factors, including the variable electronic structure of electrocatalysts, rich intermediates, and mutable active phases, have important but complex influences on the catalytic process. In addition, the support of electrocatalysts is considered as one of key factors that correlate to the final catalytic performance.
View Article and Find Full Text PDFBiosens Bioelectron
March 2012
London Centre for Nanotechnology, and Department of Electronic and Electrical Engineering, University College London, 17-19 Gordon Street, London, WC1H 0AH, UK.
A solution gate field effect transistor (SGFET) using an oxidised boron δ-doped channel on (111) diamond is presented for the first time. Employing an optimised plasma chemical vapour deposition (PECVD) recipe to deposit δ-layers, SGFETs show improved current-voltage (I-V) characteristics in comparison to previous similar devices fabricated on (100) and polycrystalline diamond, where the device is shown to operate in the enhancement mode of operation, achieving channel pinch-off and drain-source current saturation within the electrochemical window of diamond. A maximum gain and transconductance of 3 and 200μS/mm are extracted, showing comparable figures of merit to hydrogen-based SGFET.
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