Laser modulation of the FePSmemristors.

Ternary two-dimensional (2D) material-based memristors have garnered significant attention in the fields of machine learning, neuromorphic computing due to their low power consumption, rapid learning, and synaptic-like behavior. Although such memristors often exhibit high ON/OFF ratios and exceptional pulse response characteristics, they have also to face some challenges concerning reusability and switching cycles, which arise from the filament instability issues. Here we propose a modulation strategy to improve performance of 2D-material memristors with synaptic and flexible features. By laser-modulating few-layer FePS, we induced the formation of conductive filaments, realized a major improvement in performance of the FePSmemristors, achieving an ON/OFF ratio of nearly 10, low power consumption at approximately 10W of single switching operation, and maintaining stability even after over 500 cycles. The performance promotion has been ascribed to enhancement of conductive filament induced by laser-modulation. Furthermore, we have identified the effectiveness of our laser modulation under strain by building the high-performance flexible FePSmemristor. Meanwhile, we discovered a novel strain-dominant erasure method for the flexible memristors. Our work confirms that laser modulation is a viable method for enhancing the performance of 2D material-based memristive devices.