Atomic Layer Deposition for Stable InP-Based On-Chip Quantum Dot microLEDs: Hybrid Quantum Dot Pockets.

Recent advances in synthesis techniques yield InP-based QDs with optical properties comparable to those of benchmark Cd-based QDs, making InP-based QDs viable alternatives to toxic Cd-based QDs for applications such as quantum dot LEDs (QLEDs). However, QLEDs typically suffer from a loss of luminescence over time due to exposure of the QDs to ambient air. To avoid this, state-of-the-art hybrid barrier layers are explored consisting of alternating organic/inorganic layers. In this study, InP-based QD thin films and InP-based QDs embedded in Kraton polymers are encapsulated with a thin metal oxide barrier layer by atomic layer deposition (ALD). Specifically, AlO, TiO, and ZnO thin films are deposited using trimethylaluminum (TMA), tetrakis(dimethylamino)titanium (TDMAT), and diethylzinc (DEZ), with HO as the reactant. In situ photoluminescence (PL) is used to evaluate the optical response of the InP-based QDs during the ALD coating. The results show that ALD on pristine QD thin films causes degradation of luminescence, while this is not observed for polymer-embedded QDs. The long-term stability of the (ALD-coated) samples is investigated by accelerated degradation in a humidity chamber at a high temperature. Using a single AlO ALD thin film as a capping layer for polymer-embedded QDs, greater stability of the QD-PL over a period of at least 300 h is found compared to pristine QD samples. A similar study is performed with InP-based QDs embedded in UV-patterned polymer (thiol-ene) structures, the so-called QD pockets, envisioned for use in on-chip quantum dot microLEDs. These QD pockets are purposefully designed for pick-and-place operations to reduce the complexity of the on-chip quantum dot microLED manufacturing process. The PL stability was significantly improved after incorporating AlO ALD thin films, with these hybrid QD pockets showing no clear signs of degradation after 140 h. The combination of polymer embedding and ALD with the merits and scalability of the QD pocket structure is demonstrated to be an effective approach to improving the long-term QD stability and shows promise for the development of stable, InP-based on-chip quantum dot microLEDs.