AI Article Synopsis
- Two-dimensional ferroelectric materials are becoming important for developing advanced photodetectors due to their unique photogalvanic effects and strong interactions with light.
- Researchers recently synthesized a new ferroelectric material, black-phosphorus-like Bi (BP-Bi), and studied its photogalvanic effect using quantum transport simulations.
- The findings show that the photocurrent in the armchair direction is significantly higher than in the zigzag direction, with a maximum of 133 mA/W compared to 4.70 mA/W, due to differences in symmetry along the two directions.
Article Abstract
Two-dimensional ferroelectric materials have emerged as a promising candidate for the development of next-generation photodetectors owing to their inherent photogalvanic effect (PGE) and strong light-matter interactions. Recently, the first-ever elemental-based ferroelectric material, black-phosphorus-like Bi (BP-Bi), has been successfully synthesized. In this work, we investigate the PGE of the monolayer (ML) BP-Bi by using ab initio quantum transport simulation. We find that the photocurrent of the ML BP-Bi in the ferroelectric direction (armchair) is significantly larger than that in the vertical ferroelectric direction [zigzag (ZZ)]. For example, despite the comparable optical absorption rates of BP-Bi in the armchair (ARM) and ZZ directions, the maximum photocurrent (133 mA/W) in the ARM direction is 2 orders of magnitude greater than that (4.70 mA/W) in the ZZ direction. The asymmetry is attributed to the breaking and existence of the mirror inversion symmetries along the ARM and ZZ directions, respectively. Our work paves the way for the research of the low-dimensional ferroelectric photodetector.
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| http://dx.doi.org/10.1021/acsami.4c14392 | DOI Listing |
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