High dark current density (J) severely hinders further advancement of near-infrared organic photodetectors (NIR OPDs). Herein, we tackle this grand challenge by regulating molecular crystallinity and aggregation of fully non-fused ring electron acceptors (FNREAs). TBT-V-F, which features fluorinated terminals, notably demonstrates crystalline intensification and a higher prevalence predominance of J-aggregation compared to its chlorinated counterpart (TBT-V-Cl). The amalgamation of advantages confers TBT-V-F-based OPDs with lower nonradiative energy loss, improved charge transport, decreased energetic disorder, and reduced trap density. Consequently, the corresponding self-powered OPDs exhibit a 40-fold decrease in J, a remarkable increase in detectivity (D*), faster response time, and superior thermal stability compared to TBT-V-Cl-based OPDs. Further interfacial optimization results in an ultra-low J of 7.30×10 A cm with D* over 10 Jones in 320-920 nm wavelength and a climax of 2.2×10 Jones at 800 nm for the TBT-V-F-based OPDs, representing one of the best results reported to date. This work paves a compelling material-based strategy to suppress J for highly sensitive NIR OPDs, while also illustrates the viability of FNREAs in construction of stable and affordable NIR OPDs for real-world applications.
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http://dx.doi.org/10.1002/anie.202416751 | DOI Listing |
Adv Sci (Weinh)
November 2024
Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
Organic photodetectors (OPDs) with a near-infrared (NIR) response beyond 900 nm are intriguing electronics for various applications. It is challenging to develop NIR OPDs with high sensitivity and fast response. Herein, the acceptor materials of OPDs are tuned to extend detection to ≈1100 nm with improved sensitivity.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
November 2024
State Key Laboratory of Chemical Resource Engineering, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, College of Chemistry, Beijing University of Chemical Technology, Beijing, 100029, China.
High dark current density (J) severely hinders further advancement of near-infrared organic photodetectors (NIR OPDs). Herein, we tackle this grand challenge by regulating molecular crystallinity and aggregation of fully non-fused ring electron acceptors (FNREAs). TBT-V-F, which features fluorinated terminals, notably demonstrates crystalline intensification and a higher prevalence predominance of J-aggregation compared to its chlorinated counterpart (TBT-V-Cl).
View Article and Find Full Text PDFAdv Mater
September 2024
Department of Electrical and Electronic Engineering, Research Institute for Smart Energy (RISE), Photonics Research Institute (PRI), The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, P. R. China.
Near-infrared (NIR) organic photodetectors (OPDs), particularly all-polymer-based ones, hold substantial commercial promise in the healthcare and imaging sectors. However, the process of optimizing their active layer composition to achieve highly competitive figures of merit lacks a clear direction and methodology. In this work, celebrity polymer acceptor PY-IT into a more NIR absorbing host system PBDB-T:PZF-V, to significantly enhance the photodetection competence, is introduced.
View Article and Find Full Text PDFACS Appl Mater Interfaces
May 2024
Department of Materials Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan.
Adv Mater
October 2024
School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea.
The near-infrared (NIR) sensor technology is crucial for various applications such as autonomous driving and biometric tracking. Silicon photodetectors (SiPDs) are widely used in NIR applications; however, their scalability is limited by their crystalline properties. Organic photodetectors (OPDs) have attracted attention for NIR applications owing to their scalability, low-temperature processing, and notably low dark current density (J), which is similar to that of SiPDs.
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