AI Article Synopsis
- The development of a mixed-dimensional van der Waals heterojunction using 1D NbPdSe nanowires and 2D WSe nanosheets shows promise for advanced photodetectors due to its unique photoelectric properties and compatibility.
- By adjusting the Fermi level with gate voltage, the heterojunction achieves tunable rectification characteristics, enhancing its performance.
- Under 685 nm laser light, it exhibits impressive self-powered photodetection with a photoresponsivity of 1.45 A/W, a detectivity of 6.8 × 10^9 Jones, and a rapid response time, along with the capability to detect wavelengths from 255 to 1064 nm.
Article Abstract
The mixed-dimensional (MD) van der Waals (vdWs) heterojunction for photodetectors has garnered significant attention owing to its exceptional compatibility and superior quality. Low-dimensional material heterojunctions exhibit unique photoelectric properties attributed to their nanoscale thickness and vdWs contact surfaces. In this work, a novel MD vdWs heterojunction composed of one-dimensional (1D) NbPdSe nanowires and two-dimensional (2D) WSe nanosheets is proposed. The heterojunction's energy band engineering is accomplished by manipulating the Fermi level of the bipolar 2D material via gate voltage, resulting in a rectification characteristic that can be adjusted with gate voltage. Under 685 nm laser irradiation, it demonstrates exceptional self-powered photodetection performance, attaining a photoresponsivity of 1.45 A W, an ultrahigh detectivity of 6.8 × 10 Jones, and an ultrafast response time of 37/64 μs at zero bias. In addition, a broadband photodetector from 255 to 1064 nm is realized. These results demonstrate the great potential of NbPdSe/WSe MD heterostructures for advanced electronic and optoelectronic devices.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11583975 | PMC |
| http://dx.doi.org/10.1021/acsami.4c09682 | DOI Listing |
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