Controllable p-type doping and improved conductance of few-layer WSevia Lewis acid.

Nanotechnology

School of Physics, Zhejiang Province Key Laboratory of Quantum Technology and device, Zhejiang University, Hangzhou 310027, People's Republic of China.

Published: November 2024

Manipulation of the electronic properties of layered transition-metal dichalcogenides (TMDs) is of fundamental significance for a wide range of electronic and optoelectronic applications. Surface charge transfer doping is considered to be a powerful technique to regulate the carrier density of TMDs. Herein, the controllable p-type surface modification of few-layer WSeby FeClLewis acid with different doping concentrations have been achieved. Effective hole doping of WSehas been demonstrated using Raman spectra and XPS. Transport properties indicated the p-type FeClsurface functionalization significantly increased the hole concentration with 1.2 × 10cm, resulting in 6 orders of magnitude improvement for the conductance of FeCl-modified WSecompared with pristine WSe. This work provides a promising approach and facilitate the further advancement of TMDs in electronic and optoelectronic applications.

Download full-text PDF

Source
http://dx.doi.org/10.1088/1361-6528/ad8e45DOI Listing

Publication Analysis

Top Keywords

controllable p-type
8
electronic optoelectronic
8
optoelectronic applications
8
doping
4
p-type doping
4
doping improved
4
improved conductance
4
conductance few-layer
4
few-layer wsevia
4
wsevia lewis
4

Similar Publications

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!