Manipulation of the electronic properties of layered transition-metal dichalcogenides (TMDs) is of fundamental significance for a wide range of electronic and optoelectronic applications. Surface charge transfer doping is considered to be a powerful technique to regulate the carrier density of TMDs. Herein, the controllable p-type surface modification of few-layer WSeby FeClLewis acid with different doping concentrations have been achieved. Effective hole doping of WSehas been demonstrated using Raman spectra and XPS. Transport properties indicated the p-type FeClsurface functionalization significantly increased the hole concentration with 1.2 × 10cm, resulting in 6 orders of magnitude improvement for the conductance of FeCl-modified WSecompared with pristine WSe. This work provides a promising approach and facilitate the further advancement of TMDs in electronic and optoelectronic applications.
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http://dx.doi.org/10.1088/1361-6528/ad8e45 | DOI Listing |
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