Polarity-Reversal of Exchange Bias in van der Waals FePS/FeGaTe Heterostructures.

Adv Sci (Weinh)

School of Integrated Circuits, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China.

Published: December 2024

AI Article Synopsis

  • * A significant EB effect with a blocking temperature of up to 150 K is observed in FePS/FeGaTe heterostructures, showing unusual temperature-dependent behavior, including polarity-reversal.
  • * The underlying mechanism involves charge transfer at the interface that induces magnetic moments, leading to altered coupling and polarity changes in EB, which could help develop new spintronic technologies.

Article Abstract

Exchange bias (EB) in antiferromagnetic (AFM)/ferromagnetic heterostructures is crucial for the advancement of spintronic devices and has attracted significant attention. The common EB effect in van der Waals heterostructures features a low blocking temperature (T) and a single polarity. In this work, a significant EB effect with a T up to 150 K is observed in FePS/FeGaTe heterostructures, and in particular, the EB exhibits an unusual temperature-dependent polarity-reversal behavior. Under a high positive field-cooling condition (e.g., μH ≥ 0.5 T), a negative EB field (H) is observed at low temperatures, and with increasing temperature, the H crosses zero at ≈20 K, subsequently becomes positive and later approaches zero again at T. A model composed of a top FePS/interfacial FePS/FeGaTe sandwich structure is proposed. The charge transfer from FeGaTe to FePS at the interface induces net magnetic moments (∆M) in FePS. The interface favors AFM coupling, and thus the reversal of ∆M of the interfacial FePS leads to the polarity-reversal of EB. Moreover, the EB can be extended to the bare FeGaTe region of the FeGaTe flake partially covered by FePS. This work provides opportunities for a deeper understanding of the EB effect and opens a new route toward constructing novel spintronic devices.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11672248PMC
http://dx.doi.org/10.1002/advs.202409210DOI Listing

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