van der Waals heterostructures have emerged as an ideal platform for creating engineered artificial electronic states. While vertical heterostructures have been extensively studied, realizing high-quality lateral heterostructures with atomically sharp interfaces remains a major experimental challenge. Here, we advance a one-pot two-step molecular beam lateral epitaxy approach and successfully synthesize atomically well-defined 1T-VSe─1H-NbSe lateral heterostructures. We demonstrate the formation of defect-free lateral heterostructures and characterize their electronic structure by using scanning tunneling microscopy and spectroscopy together with density functional theory calculations. We find additional electronic states at the 1D interface as well as signatures of Kondo resonances in a side-coupled geometry. Our experiments explored the full potential of lateral heterostructures for realizing exotic electronic states in low-dimensional systems for further studies of artificial designer quantum materials.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11562791 | PMC |
| http://dx.doi.org/10.1021/acsnano.4c10302 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Large-Area Transfer of Nanometer-Thin C Films.
ACS Nano
January 2025
School of Environmental and Life Sciences, The University of Newcastle, Callaghan, New South Wales 2308, Australia.
Fullerenes, with well-defined molecular structures and high scalability, hold promise as fundamental building blocks for creating a variety of carbon materials. The fabrication and transfer of large-area films with precisely controlled thicknesses and morphologies on desired surfaces are crucial for designing and developing fullerene-based materials and devices. In this work, we present strategies for solid-state transferring C molecular nanometer-thin films, with dimensions of centimeters in lateral size and thicknesses controlled in the range of 1-20 nm, onto various substrates.
View Article and Find Full Text PDFSpintronic terahertz metasurface emission characterized by scanning near-field nanoscopy.
Nanophotonics
April 2024
School of Electronic and Information Engineering, and School of Cyber Science and Technology, Beihang University, Beijing, China.
Understanding the ultrafast excitation, detection, transportation, and manipulation of nanoscale spin dynamics in the terahertz (THz) frequency range is critical to developing spintronic THz optoelectronic nanodevices. However, the diffraction limitation of the sub-millimeter waves - THz wavelengths - has impaired experimental investigation of spintronic THz nano-emission. Here, we present an approach to studying laser THz emission nanoscopy from W|CoFeB|Pt metasurfaces with ∼60-nm lateral spatial resolution.
View Article and Find Full Text PDFRobust Topological Interface States in a Lateral Magnetic-Topological Heterostructure.
Small
December 2024
School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
Introducing uniform magnetic order in two-dimensional (2D) topological insulators by constructing heterostructures of TI and magnet is a promising way to realize the high-temperature Quantum Anomalous Hall effect. However, the topological properties of 2D materials are susceptible to several factors that make them difficult to maintain, and whether topological interface states (TISs) can exist at magnetic-topological heterostructure interfaces is largely unknown. Here, it is experimentally shown that TISs in a lateral heterostructure of CrTe/Bi(110) are robust against disorder, defects, high magnetic fields (time-reversal symmetry-breaking perturbations), and elevated temperature (77 K).
View Article and Find Full Text PDFProbing the multi-disordered nanoscale alloy at the interface of lateral heterostructure of MoS-WS.
Nanophotonics
March 2024
Department of Physics, Hanyang University, Seoul 04763, Korea.
Transition metal dichalcogenide (TMDs) heterostructure, particularly the lateral heterostructure of two different TMDs, is gaining attention as ultrathin photonic devices based on the charge transfer (CT) excitons generated at the junction. However, the characteristics of the interface of the lateral heterostructure, determining the electronic band structure and alignment at the heterojunction region, have rarely been studied due to the limited spatial resolution of nondestructive analysis systems. In this study, we investigated the confined phonons resulting from the phonon-disorder scattering process involving multiple disorders at the lateral heterostructure interface of MoS-WS to prove the consequences of disorder-mediated deformation in the band structure.
View Article and Find Full Text PDFTunable magnetic and electronic properties of CrS/VS lateral superlattices.
Nanoscale
December 2024
Department of Physics, OSED, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Xiamen University, Xiamen 361005, China.
Article Synopsis
- Two-dimensional (2D) superlattices made from transition metal dichalcogenides, like CrS and VS, display exceptional electronic and magnetic properties useful for advanced technologies.
- The CrS/VS superlattice shows stability and magnetism, with magnetic phase transitions influenced by its size and sublattice width.
- Electronic behavior in these superlattices varies: smaller ones create semiconductor contacts and allow for electron segregation, while larger ones restrict electronic states, resulting in different types of metal-semiconductor contacts, enhancing tunability for future spintronic devices.
Want AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!