Interfacial issues between the perovskite film and electron transport layer greatly limit the efficiency and stability of inverted (p-i-n) perovskite solar cells (PSCs). Despite organic ammonium passivants have been widely established as interfacial layers, they failed to improve electron extraction. Here, we reported that the heavy n-type characteristics in a low band gap perovskite film could be modulated by incorporating non-conjugated ammonium passivants with strong electron-withdrawing abilities. This resulted in a significant enhancement of electron extraction in the heavily n-type doped perovskite. The passivant-treated PSCs exhibited a power conversion efficiency of 25.74 % with an excellent fill factor of 85.4 % and a high open-circuit voltage of 1.166 V, which are significantly higher than that of the control device. The unencapsulated devices maintained 88 % of their initial PCEs after 1,200 hours at 85 °C.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1002/anie.202418606 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Platinum-Acetylide Complexes as Nonfullerene Acceptors in Organic Photovoltaic Systems.
Inorg Chem
December 2024
Department of Energy and Materials, Kindai University, 3-4-1 Kowakae, Higashi-Osaka, Osaka 577-8502 Japan.
Three distinct n-type semiconductors were derived from a platinum-trialkyl phosphine complex; to lower their LUMO levels, various indene derivatives were incorporated using thiophene (PtTIC ()), thieno[3,2-]thiophene (PtT2IC ()), and 4-cyclopenta[2,1-:3,4-']dithiophene (PtCDTIC ()) as the acetylide donor units. Single-crystal X-ray diffractometry analysis revealed translinear platinum-acetylide complexation in all cases. The strong (═O···S) interactions between the oxygen atoms of the indene acceptor units and the sulfur atoms of the thiophene-derived donor units induced a highly planar orientation among the heterocyclic ligands, featuring π-π interactions between the planes.
View Article and Find Full Text PDFp-Type AgAuSe Quantum Dots.
J Am Chem Soc
November 2024
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China.
Control over the carrier type of semiconductor quantum dots (QDs) is pivotal for their optoelectronic device applications, and it remains a nontrivial and challenging task. Herein, a facile doping strategy via K impurity exchange is proposed to convert the NIR n-type toxic heavy-metal-free AgAuSe (AAS) QDs to p-type. When the dopant reaches saturation at approximately 22.
View Article and Find Full Text PDFControllable Heavy n-type Behaviours in Inverted Perovskite Solar Cells with Non-Conjugated Passivants.
Angew Chem Int Ed Engl
November 2024
Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China.
Interfacial issues between the perovskite film and electron transport layer greatly limit the efficiency and stability of inverted (p-i-n) perovskite solar cells (PSCs). Despite organic ammonium passivants have been widely established as interfacial layers, they failed to improve electron extraction. Here, we reported that the heavy n-type characteristics in a low band gap perovskite film could be modulated by incorporating non-conjugated ammonium passivants with strong electron-withdrawing abilities.
View Article and Find Full Text PDFHeavy Boron-Doped Silicon Tunneling Inter-layer Enables Efficient Silicon Heterojunction Solar Cells.
ACS Appl Mater Interfaces
September 2024
Research Center for New Energy Technology, State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Changning, Shanghai 200050, China.
Article Synopsis
- P-type hydrogenated nanocrystalline silicon (nc-Si:H) enhances hole transport in n-type crystalline silicon heterojunction (SHJ) solar cells, but a valence band offset issue limits performance.
- Researchers discovered that adding a heavily boron-doped silicon oxide layer reduces this offset, boosting the fill factor of SHJ cells by 3%.
- This innovation, along with improved boron levels in adjacent amorphous silicon, increases the built-in electric field and raises overall power conversion efficiency from 23.9% to about 25%.
Design of an Oxide Monolayer with High by a Strong Anharmonicity Unit.
ACS Appl Mater Interfaces
September 2024
Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
In this paper, a new strategy to obtain a transition-metal oxide (TMO) thermoelectric monolayer is demonstrated. We show that the TMO thermoelectric monolayer can be achieved by the replacement of a transition-metal atom with a cluster, which is composed of heavy transition atoms with abundant valence electrons. Specifically, the transition-metal atom in the XO (X = Ti, Zr, Hf) monolayer is replaced by the [Ag] cluster and a stable structure AgO is achieved.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!