AI Article Synopsis
- The study evaluates the accuracy of electron-excited X-ray microanalysis using energy-dispersive spectrometry (EDS) at a low beam energy of 5 keV, suitable for analyzing almost all elements on the periodic table, except hydrogen and helium.
- Elemental analysis was performed on various certified reference materials, stoichiometric compounds, minerals, and metal alloys, totaling 263 measurements across 39 elements in 113 materials.
- Results showed high accuracy, with over 98% of measurements within ±5% relative deviation from expected values, and 82% falling within a tighter range of -2% to 2% relative deviation.
Article Abstract
The accuracy of electron-excited X-ray microanalysis with energy-dispersive spectrometry (EDS) has been tested in the low beam energy range, specifically at an incident beam energy of 5 keV, which is the lowest beam energy for which a useful characteristic X-ray peak can be excited for all elements of the periodic table, excepting H and He. Elemental analysis results are reported for certified reference materials (CRM), stoichiometric compounds, minerals, and metal alloys of independently known or measured composition which had microscopic homogeneity suitable for microanalysis. Two-hundred sixty-three concentration measurements for 39 elements in 113 materials were determined following the and using the EDS analytical software NIST DTSA-II. The accuracy of the results, as characterized by the (RDEV) metric, was such that more than 98% of the results were found to be captured within a range of ±5% RDEV, while 82% of the results fell in the range -2% to 2% RDEV.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11513705 | PMC |
| http://dx.doi.org/10.1007/s10853-024-10285-4 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Measurement of the Ge(d,n)As cross section from 2.1 MeV to 10 MeV.
Appl Radiat Isot
December 2024
Department of Medical Physics University of Wisconsin School of Medicine and Public Health, Madison, WI, 53705, USA. Electronic address:
This work reports experimental Ge(d,n)As cross sections producing Arsenic-71 (t = 65.3 h, 28% β), a potentially useful diagnostic radionuclide. Target stacks containing two Ge foils, a Ni monitor foil, and an Al degrader were irradiated with 5.
View Article and Find Full Text PDFInfluence of spatial redistribution of heterogeneities in proton beam characteristics.
Phys Med
January 2025
Department of Medical Physics, Apollo Proton Cancer Centre, 100 Feet Road Taramani, Chennai, Tamil Nadu, India. Electronic address:
Objectives: The purpose of this study was to investigate the fundamental properties of spot-scanning proton beams and compare them to Monte Carlo (MC) simulations, both with and without CT calibration, using spatially diverse combinations of materials.
Methods: A heterogeneous phantom was created by spatially distributing titanium, wax, and thermocol to generate six scenarios of heterogeneous combinations. Proton pencil beams ranging in energy from 100 to 226.
Matched Guiding and Controlled Injection in Dark-Current-Free, 10-GeV-Class, Channel-Guided Laser-Plasma Accelerators.
Phys Rev Lett
December 2024
Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
Article Synopsis
- Researchers investigated how high-intensity laser pulses propagate through a plasma channel by adjusting its length, successfully guiding 500 terawatt pulses over distances of 30 cm in hydrogen plasma.
- They observed the initial energy transfer involving higher-order modes and a transition to more efficient propagation, noting a depletion of laser energy that generates wakefields.
- Utilizing 21.3 joules of laser energy for localized electron injection, they achieved electron bunches with nearly monenergetic peaks reaching 9.2 GeV and total charge exceeding 10 GeV.
Nanostructure fabrication by area selective deposition: a brief review.
Mater Horiz
January 2025
Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
In recent years, area-selective deposition (ASD) processes have attracted increasing interest in both academia and industry due to their bottom-up nature, which can simplify current fabrication processes with improved process accuracy. Hence, more research is being conducted to both expand the toolbox of ASD processes to fabricate nanostructured materials and to understand the underlying mechanisms that impact selectivity. This article provides an overview of current developments in ASD processes, beginning with an introduction to various approaches to achieve ASD and the factors that affect selectivity between growth and non-growth surfaces, using area-selective atomic layer deposition (AS-ALD) as the main model system.
View Article and Find Full Text PDFOriented wide-bandgap perovskites for monolithic silicon-based tandems with over 1000 hours operational stability.
Nat Commun
January 2025
State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, China.
The instability of hybrid wide-bandgap (WBG) perovskite materials (with bandgap larger than 1.68 eV) still stands out as a major constraint for the commercialization of perovskite/silicon tandem photovoltaics, yet its correlation with the facet properties of WBG perovskites has not been revealed. Herein, we combine experiments and theoretical calculations to comprehensively understand the facet-dependent instability of WBG perovskites.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!