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Ultraflat Cu(111) foils by surface acoustic wave-assisted annealing.
Nat Commun
November 2024
School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
Ultraflat metal foils are essential for semiconductor nanoelectronics applications and nanomaterial epitaxial growth. Numerous efforts have been devoted to metal surface engineering studies in the past decades. However, various challenges persist, including size limitations, polishing non-uniformities, and undesired contaminants.
View Article and Find Full Text PDFUltraflat hexagonal boron nitride for high-κ dielectric integration.
Nat Mater
November 2024
Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea.
Ultraflat single-crystal hexagonal boron nitride for wafer-scale integration of a 2D-compatible high-κ metal gate.
Nat Mater
November 2024
Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
Hexagonal boron nitride (hBN) has emerged as a promising protection layer for dielectric integration in the next-generation large-scale integrated electronics. Although numerous efforts have been devoted to growing single-crystal hBN film, wafer-scale ultraflat hBN has still not been achieved. Here, we report the epitaxial growth of 4 in.
View Article and Find Full Text PDFMiracle in "White":Hexagonal Boron Nitride.
Small
May 2024
Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 10084, P. R. China.
The exploration of 2D materials has captured significant attention due to their unique performances, notably focusing on graphene and hexagonal boron nitride (h-BN). Characterized by closely resembling atomic structures arranged in a honeycomb lattice, both graphene and h-BN share comparable traits, including exceptional thermal conductivity, impressive carrier mobility, and robust pi-pi interactions with organic molecules. Notably, h-BN has been extensively examined for its exceptional electrical insulating properties, inert passivation capabilities, and provision of an ideal ultraflat surface devoid of dangling bonds.
View Article and Find Full Text PDFExceptional electronic transport and quantum oscillations in thin bismuth crystals grown inside van der Waals materials.
Nat Mater
June 2024
Department of Physics and Astronomy, University of California Irvine, Irvine, CA, USA.
Article Synopsis
- Researchers have developed a method to grow ultrathin bismuth crystals (less than 10 nm thick) using a nanoscale mould made from atomically flat van der Waals materials like hexagonal boron nitride.
- *This process results in unique electronic properties due to quantum confinement, isolating effective surface states that allow for advanced transport studies, including quantum oscillations.
- *The technique not only enhances the understanding of bismuth's electronic behavior but also offers a cost-effective way to create and integrate ultrathin crystals into various electronic structures.
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