High-Performance Ultra-Broadband Photodetector Based on FeO/CrSiTe Heterostructures.

ACS Appl Mater Interfaces

Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.

Published: November 2024

AI Article Synopsis

  • Advanced materials for photodetectors are sought after for their wide spectral response, high sensitivity, and stable operation in various applications like imaging and sensing.
  • A new ultra-broadband photodetector utilizing an ultrathin 2D FeO nanoflake heterostructure has been developed, which operates effectively from visible light (405 nm) to long-wave infrared (LWIR, 10.6 μm) at room temperature.
  • The device demonstrates impressive performance metrics, including high photoresponsivity (182.8 A/W), rapid response times, and strong LWIR detection, suggesting potential for future infrared optoelectronic technology using ultrathin materials.

Article Abstract

Photodetectors based on advanced materials with a broad spectral photoresponse, high sensitivity, huge integration ability, room-temperature operation, and stable environmental stability are highly desired for diversified applications of imaging, sensing, and communication. Herein, a high-performance ultra-broadband photodetector based on an ultrathin two-dimensional (2D) FeO nanoflake heterostructure with high sensitivity was designed. The photodetector response light was from visible 405 nm to long-wave infrared (LWIR) 10.6 μm in ambient air. The competitive performances, including a high photoresponsivity () of 182.8 A W, fast speed with the rise time τ = 8.8 μs, and decay time τ = 4.1 μs, were demonstrated in the visible range. Notably, the device exhibits an excellent uncooled LWIR detection ability, with a high of 1.4 A W realized at a 1.5 V bias. In the full spectral range, the noise equivalent power is lower than 0.79 pW Hz, and specific detectivity (*) is higher than 4.9 × 10 cm Hz W in ambient air. This work provides alternative ultrathin 2D materials for future infrared optoelectronic devices.

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http://dx.doi.org/10.1021/acsami.4c10952DOI Listing

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