Narrow-linewidth semiconductor lasers are highly valued in scientific research and industrial applications owing to their high coherence and low phase noise characteristics, particularly in high-performance optical communications, sensing, and microwave photonic systems. Accuracy, a key objective of many application systems, is determined by the noise of the light source. As system accuracy improves, the requirements for the light source become more stringent, with linewidth reduction and noise reduction being the top priorities. Currently, extensive attention and research are focused on suppressing noise generated by narrow-linewidth lasers. This paper presents noise measurement methods, analyses of the mechanisms for noise suppression, and recent research progress in low-noise semiconductor lasers, focusing on material optimization, structural design, and feedback control. The limitations of current technological solutions are discussed, and future scientific trends are outlined.
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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11497396 | PMC |
http://dx.doi.org/10.1016/j.heliyon.2024.e38586 | DOI Listing |
Nanomaterials (Basel)
December 2024
State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, China.
As an emerging two-dimensional (2D) Group-VA material, bismuth selenide (BiSe) exhibits favorable electrical and optical properties. Here, three distinct morphologies of BiSe were obtained from bulk BiSe through electrochemical intercalation exfoliation. And the morphologies of these nanostructures can be tuned by adjusting solvent polarity during exfoliation.
View Article and Find Full Text PDFNanoscale
January 2025
The Canter for Photochemical Sciences and Department of Physics, Bowling Green State University, Bowling Green, Ohio 43403, USA.
Laser diodes based on solution-processed semiconductor quantum dots (QDs) present an economical and color-tunable alternative to traditional epitaxial lasers. However, their efficiency is significantly limited by non-radiative Auger recombination, a process that increases lasing thresholds and diminishes device longevity through excessive heat generation. Recent advancements indicate that these limitations can be mitigated by employing spherical quantum wells, or quantum shells (QSs), in place of conventional QDs.
View Article and Find Full Text PDFLight Sci Appl
January 2025
Key Laboratory of Photonic Technology for Integrated Sensing and Communication, Ministry of Education of China, Guangdong University of Technology, Guangzhou, 510006, China.
Common-signal-induced synchronization of semiconductor lasers have promising applications in physical-layer secure transmission with high speed and compatibility with the current fiber communication. Here, we propose an ultra-long-distance laser synchronization scheme by utilizing random digital optical communication signal as the common drive signal. By utilizing the long-haul optical coherent communication techniques, high-fidelity fiber transmission of the digital drive can be achieved and thus ultra-long-distance synchronization is expected.
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December 2024
School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.
The combination of ZnO with narrow bandgap materials such as CuO is now a common method to synthesize high-performance optoelectronic devices. This study focuses on optimizing the performance of p-CuO/n-ZnO heterojunction pyroelectric photodetectors, fabricated through magnetron sputtering, by leveraging the pyro-phototronic effect. The devices' photoresponse to UV (365 nm) and visible (405 nm) lasers is thoroughly examined.
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December 2024
School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
We observed tunable characteristics of optical frequency combs (OFCs) generated from InGaAs/GaAs double quantum wells (DQWs) asymmetric waveguide two-section mode-locked lasers (TS-MLLs). This involves an asymmetric waveguide mode-locked semiconductor laser (AWML-SL) operating at a center wavelength of net modal gain of approximately 1.06 µm, which indicates a stable pulse shape, with the power-current(P-I) characteristic curve revealing a small difference between forward and reverse drive currents in the gain region.
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