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Exploring the Crystal Structure and Electronic Properties of γ-AlO: Machine Learning Drives Future Material Innovations. | LitMetric

Exploring the Crystal Structure and Electronic Properties of γ-AlO: Machine Learning Drives Future Material Innovations.

ACS Appl Mater Interfaces

State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China.

Published: November 2024

AI Article Synopsis

  • Researchers face challenges in determining the crystal structure of γ-AlO due to atomic disorder and purity issues, but this study employs machine learning and density functional theory (DFT) to advance the understanding.
  • A potential supercell structure was identified and confirmed through advanced microscopy techniques, revealing that γ-AlO deviates from a typical spinel structure, with octahedral vacancies playing a role in energy reduction.
  • Under an external electric field, significant changes in the material's band structure result in a narrowing bandgap and increased metallic behavior, which helps explain variations in electrical conductivity and provides insights into the dielectric breakdown of insulating materials.

Article Abstract

For decades, researchers have struggled to determine the precise crystal structure of γ-AlO due to its atomic-level disorder and the challenges associated with obtaining high-purity, high-crystallinity γ-AlO in laboratory settings. This study investigates the crystal structure and electronic properties of γ-AlO coatings under the influence of an external electric field, integrating machine learning with density functional theory (DFT). A potential 160-atom supercell structure was identified from over 600,000 γ-AlO configurations and confirmed through high-resolution transmission electron microscopy and selected area electron diffraction. The findings indicate that γ-AlO deviates from the conventional spinel structure, suggesting that octahedral vacancies can reduce the system's energy. Under an external electric field, the material's band structure and density of states (DOS) undergo significant changes: the bandgap narrows from 3.996 to 0 eV, resulting in metallic behavior, while the projected density of states (PDOS) exhibits peak broadening and splitting of oxygen atom PDOS below the Fermi level. These alterations elucidate the variations in the electrical conductivity of alumina coatings under an electric field. These findings clarify the mechanisms of γ-AlO's electronic property modulation and offer insights into its covalent and ionic mixed bonding as a wide-bandgap semiconductor. This discovery is essential for understanding dielectric breakdown in insulating materials.

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Source
http://dx.doi.org/10.1021/acsami.4c10774DOI Listing

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