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High-Pressure Synthesis of Te-Ge Double-Substituted Skutterudite with Enhanced Thermoelectric Properties. | LitMetric

High-Pressure Synthesis of Te-Ge Double-Substituted Skutterudite with Enhanced Thermoelectric Properties.

ACS Appl Mater Interfaces

State Key Laboratory of Superhard of Materials, College of Physics, Jilin University, Changchun 130012, Jilin, China.

Published: November 2024

AI Article Synopsis

  • Researchers synthesized CoSbTeGe using high-pressure and high-temperature methods, achieving conditions of around 2 GPa and 900 K.
  • Characterization techniques like X-ray diffraction and electron backscatter diffraction revealed an average grain size of 1 μm for the material.
  • The study found that introducing Te and Ge into CoSbTeGe significantly reduced lattice thermal conductivity and improved thermoelectric properties, with a maximum figure of merit (ZT) of 1.13 at 800 K.

Article Abstract

We synthesized CoSbTeGe ( = 0.5-0.8) using high-pressure, high-temperature conditions at ∼2 GPa and ∼900 K. The microstructure, morphology, and components were characterized via X-ray diffraction, scanning electron microscopy, and electron backscatter diffraction (EBSD). EBSD indicated that the average grain size of CoSbTeGe was 1 μm. Electrical conductivity, Seebeck coefficient, and thermal conductivity were measured from 300 to 800 K. The minimum lattice thermal conductivity of CoSbTeGe was 0.72 W m K, 74% lower than that at 300 K. The introduction of Te and Ge effectively enhanced point effects scattering and location scattering, notably decreasing lattice thermal conductivity. Therefore, the maximum value of CoSbTeGe was 1.13 at 800 K. These results indicate that high pressure combined with multielement substitution optimized the thermoelectric transport properties of skutterudites.

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Source
http://dx.doi.org/10.1021/acsami.4c13585DOI Listing

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