Herein, we demonstrate that coevaporated dopants provide a means to passivate buried interfacial defects occurring at perovskite grain boundaries in evaporated perovskite thin films, thus giving rise to an enhanced photoluminescence. By means of an extensive photophysical characterization, we provide experimental evidence that indicate that the codopant acts mainly at the grain boundaries. They passivate interfacial traps and prevent the formation of photoinduced deep traps. On the other hand, the presence of an excessive amount of organic dopant can lead to a barrier for carrier diffusion. Hence, the passivation process demands a proper balance between the two effects. Our analysis on the role of the dopant, performed under different excitation regimes, permits evaluation of the performance of the material under conditions more adapted to photovoltaic or light emitting applications. In this context, the approach taken herein provides a screening method to evaluate the suitability of a passivating strategy prior to its incorporation into a device.
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http://dx.doi.org/10.1021/acsami.4c13434 | DOI Listing |
ACS Appl Mater Interfaces
November 2024
Instituto de Ciencia Molecular, Universidad de Valencia, C/J. Beltrán 2, Paterna 46980, Spain.
Herein, we demonstrate that coevaporated dopants provide a means to passivate buried interfacial defects occurring at perovskite grain boundaries in evaporated perovskite thin films, thus giving rise to an enhanced photoluminescence. By means of an extensive photophysical characterization, we provide experimental evidence that indicate that the codopant acts mainly at the grain boundaries. They passivate interfacial traps and prevent the formation of photoinduced deep traps.
View Article and Find Full Text PDFAdv Mater
July 2024
Chair for Emerging Electronic Technologies, Technical University of Dresden, Nöthnitzer Str. 61, 01187, Dresden, Germany.
Electrical doping of semiconductors is a revolutionary development that enabled many electronic and optoelectronic technologies. While doping of many inorganic and organic semiconductors is well-established, controlled electrical doping of metal halide perovskites (MHPs) is yet to be demonstrated. In this work, efficient n- and p-type electrical doping of MHPs by co-evaporating the perovskite precursors alongside organic dopant molecules is achieved.
View Article and Find Full Text PDFACS Appl Mater Interfaces
November 2022
University of Science and Technology, Daejeon34113, Republic of Korea.
Chalcopyrite-based materials for photovoltaic devices tend to exhibit complex structural imperfections originating from their polycrystalline nature; nevertheless, properly controlled devices are surprisingly irrelevant to them in terms of resulting device performances. The present work uses atom probe tomography to characterize co-evaporated high-quality Cu(In,Ga)Se (CIGS) films on flexible polyimide substrates either with or without doping with Na or doping with Na followed by K via a post-deposition treatment. The intent is to elucidate the unique characteristics of the grain boundaries (GBs) in CIGS, in particular the correlations/anti-correlations between matrix elements and the alkali dopants.
View Article and Find Full Text PDFACS Appl Mater Interfaces
November 2021
Group for Molecular Engineering of Functional Materials, Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL Valais Wallis), Rue de l'Industrie 17, CH-1951 Sion, Switzerland.
Hybrid lead halide perovskites have reached comparable efficiencies to state-of-the-art silicon solar cell technologies. However, a remaining key challenge toward commercialization is the resolution of the perovskite device instability. In this work, we identify for the first time the mobile nature of bis(trifluoromethanesulfonyl)imide (TFSI), a typical anion extensively employed in p-type dopants for 2,2'7,7'-tetrakis(,-di--methoxyphenylamine)-9,9'spirofluorene (spiro-OMeTAD).
View Article and Find Full Text PDFJ Phys Chem Lett
October 2021
Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, Collaborative Innovation Center of Chemistry for Energy Materials, School of Chemistry and Materials Science, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China.
Oxygen vacancy is a common defect in metal oxides that causes appreciable damage to material properties and performance. Removing bulk defects of oxygen vacancy (V) typically needs harsh conditions such as high-temperature annealing. Supported by first-principles simulations, we propose an effective strategy of removing V bulk defects in metal oxides by evaporating hydrogen dopants.
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