Decoding Hydrogen Desorption Kinetics in Porous Silicon: An Electrical Circuit Modeling Approach.

Solid-state hydrogen storage outperforms conventional storage methods in terms of safety and on-board applications. Porous Si (PS) is the optimized Si nanostructure with ample surface area (∼400 m g) and maximum dangling sites for hydrogenation. Though solid-state hydrogen storage in Si nanostructures, especially in porous Si, is extensively studied, the thermal desorption of hydrogen is rarely reported. This work investigates and analyzes the thermal desorption of a hydrogen-terminated PS surface using attenuated total reflectance-Fourier transform infrared spectroscopy (ATR-FTIR) to optimize the temperature for efficient desorption, as FTIR is sensitive to identifying the presence of Si hydride species (SiH). The relative peak intensities in the spectra estimate the relative hydrogen retention (γ) for the analysis of the desorption kinetics. The desorption curves are divided into two zones on the time scale: the excitation zone and the recombination zone, separated by the recombination threshold point. The initially absorbed energy breaks the Si-H bonds in the excitation zone to reach the recombination threshold for H formation. The recombination zone is further divided into two subzones: the avalanche subzone (a sudden decrease in γ indicating molecular desorption) and the saturation subzone (almost constant γ with minimal desorption). The time constant from the first-order reaction kinetic fitting of the desorption curves explores the time-temperature correlation and the barrier energy estimation for the excitation and recombination zones. The analysis identifies the critical operating point for desorption as 100 °C and 4 min, with the optimized temperature of 250 °C. This article applies an analogous electrical circuit to compare the thermal hydrogen desorption and capacitor discharge circuit for analytical convenience.