The continuous advancement of computing technologies such as the Internet of Things and artificial intelligence emphasizes the need for innovative approaches to data processing. Faced with limitations in processing speed due to the exponentially increasing volume of data, conventional von-Neumann computing systems are transforming into a new paradigm called neuromorphic computing, inspired by the efficiency of the human brain. We fabricate three-dimensional vertical resistive random-access memory (VRRAM), which is highly suited for neuromorphic computing, and demonstrate its value as an artificial synapse. Beyond simulating simple synaptic functionalities such as spike-rate-dependent plasticity, spike-timing-dependent plasticity, and paired-pulse facilitation, we propose specific applications and experimentally implement them. In pattern recognition simulations based on the weight update characteristics of the fabricated VRRAM, the accuracy achieved in pattern recognition using appropriate pulse schemes reaches 90.4%. Additionally, we demonstrate adaptive learning behavior on the device by mimicking Pavlov's dog experiment with combinations of applied voltage pulses. Finally, we employ suitable write/erase pulse trains to implement binary representations for decimal numbers ranging from 0 to 15, thereby illustrating the significant potential of local devices for edge computing applications.
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http://dx.doi.org/10.1021/acsami.4c11743 | DOI Listing |
Philos Trans A Math Phys Eng Sci
January 2025
Microsystems Group, School of Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU, UK.
The increasing demand for processing large volumes of data for machine learning (ML) models has pushed data bandwidth requirements beyond the capability of traditional von Neumann architecture. In-memory computing (IMC) has recently emerged as a promising solution to address this gap by enabling distributed data storage and processing at the micro-architectural level, significantly reducing both latency and energy. In this article, we present In-Memory comPuting architecture based on Y-FlAsh technology for Coalesced Tsetlin machine inference (IMPACT), underpinned on a cutting-edge memory device, Y-Flash, fabricated on a 180 nm complementary metal oxide semiconductor (CMOS) process.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
School of Materials and Energy, Lanzhou University (LZU), Lanzhou 730000, China.
Complementary neural network circuits combining multifunctional high-performance p-type with n-type organic artificial synapses satisfy sophisticated applications such as image cognition and prosthesis control. However, implementing the dual-modal memory features that are both volatile and nonvolatile in a synaptic transistor is challenging. Herein, for the first time, we propose a single vertical n-type organic synaptic transistor (VNOST) with a novel polymeric organic mixed ionic-electronic conductor as the core channel material to achieve dual-modal synaptic learning/memory behaviors at different operating current densities via the formation of an electric double layer and the reversible ion doping.
View Article and Find Full Text PDFNat Nanotechnol
January 2025
Department of Physics and Astronomy, University of California, Irvine, CA, USA.
Spin-orbit torques enable energy-efficient manipulation of magnetization by electric current and hold promise for applications ranging from non-volatile memory to neuromorphic computing. Here we report the discovery of a giant spin-orbit torque induced by anomalous Hall current in ferromagnetic conductors. This anomalous Hall torque is self-generated as it acts on the magnetization of the ferromagnet that engenders the torque.
View Article and Find Full Text PDFAdv Mater
January 2025
Department of Biomedical Engineering, The Chinese University of Hong Kong, Sha Tin, Hong Kong SAR, China.
This special issue spans a diverse array of topics, including nanomedicine, tissue engineering, regenerative medicine, organs-on-chips, biosensing, soft robotics, smart devices, nanofabrication, energy saving and storage, catalysis, spintronics, soft electronics, and neuromorphic computing. It showcases the breadth and depth of advanced materials research at the Chinese University of Hong Kong (CUHK), highlighting the innovation, collaboration, and excellence of CUHK's materials scientists.
View Article and Find Full Text PDFNat Commun
January 2025
Neuromorphic Computing Lab, Intel, Santa Clara, CA, USA.
Reservoir computing advances the intriguing idea that a nonlinear recurrent neural circuit-the reservoir-can encode spatio-temporal input signals to enable efficient ways to perform tasks like classification or regression. However, recently the idea of a monolithic reservoir network that simultaneously buffers input signals and expands them into nonlinear features has been challenged. A representation scheme in which memory buffer and expansion into higher-order polynomial features can be configured separately has been shown to significantly outperform traditional reservoir computing in prediction of multivariate time-series.
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