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Tunable hybridized plasmons-phonons in a graphene/mica-nanofilm heterostructure. | LitMetric

Tunable hybridized plasmons-phonons in a graphene/mica-nanofilm heterostructure.

Nanoscale

CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P. R. China.

Published: November 2024

Graphene plasmons exhibit significant potential across diverse fields, including optoelectronics, metamaterials, and biosensing. However, the exposure of all surface atoms in graphene makes it susceptible to surrounding interference, including losses stemming from charged impurity scattering, the dielectric environment, and the substrate roughness. Thus, designing a dielectric environment with a long lifetime and tunability is essential. In this study, we created a van der Waals (vdW) heterostructure with graphene nanoribbons and mica nano-films. Through Fourier-transform infrared spectroscopy, we identified hybrid modes resulting from the interaction between graphene plasmons and mica phonons. By doping and manipulating the structure of graphene, we achieved control over the phonon-plasmon ratio, thereby influencing the characteristics of these modes. Phonon-dominated modes exhibited stable resonant frequencies, whereas plasmon-dominated modes demonstrated continuous tuning from 1140 to 1360 cm in resonance frequency, accompanied by an increase in extinction intensity from 0.1% to 1.2%. Multiple phonon couplings limited frequency modulation, yielding stable resonances unaffected by the gate voltage. Mica substrates offer atomic level flatness, long phonon lifetimes, and dielectric functionality, enabling hybrid modes with high confinement, extended lifetimes (up to 1.9 picoseconds), and a broad frequency range (from 750 cm to 1450 cm). These properties make our graphene and mica heterostructure promising for applications in chemical sensing and integrated photonic devices.

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Source
http://dx.doi.org/10.1039/d4nr00942hDOI Listing

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