AI Article Synopsis
- * In silicon, the spin-orbit coupling (SOC) is usually weak but can be significantly enhanced near surfaces or through specific atomic arrangements.
- * The study demonstrates that multi-donor quantum dots can have SOC strengths increased by over 100 times compared to single donors, paving the way for electric control of spins in silicon through techniques like electric dipole spin resonance (EDSR).
Article Abstract
While traditionally considered a deleterious effect in quantum dot spin qubits, the spin-orbit interaction is recently being revisited as it allows for rapid coherent control by on-chip AC electric fields. For electrons in bulk silicon, spin-orbit coupling (SOC) is intrinsically weak, however, it can be enhanced at surfaces and interfaces, or through atomic placement. Here it is showed that the strength of the spin-orbit coupling can be locally enhanced by more than two orders of magnitude in the manybody wave functions of multi-donor quantum dots compared to a single donor, reaching strengths so far only reported for holes or two-donor system with certain symmetry. These findings may provide a pathway toward all-electrical control of donor-bound spins in silicon using electric dipole spin resonance (EDSR).
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| http://dx.doi.org/10.1002/adma.202405916 | DOI Listing |
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