We present an ab initio method for computing vibro-polariton and phonon-polariton spectra of molecules and solids coupled to the photon modes of optical cavities. We demonstrate that if interactions of cavity photon modes with both nuclear and electronic degrees of freedom are treated on the level of the cavity Born-Oppenheimer approximation, spectra can be expressed in terms of the matter response to electric fields and nuclear displacements, which are readily available in standard density functional perturbation theory implementations. In this framework, results over a range of cavity parameters can be obtained without the need for additional electronic structure calculations, enabling efficient calculations on a wide range of parameters. Furthermore, this approach enables results to be more readily interpreted in terms of the more familiar cavity-independent molecular electric field response properties, such as polarizability and Born effective charges, which enter into the vibro-polariton calculation. Using corresponding electric field response properties of bulk insulating systems, we are also able to obtain the Γ point phonon-polariton spectra of two dimensional (2D) insulators. Results for a selection of cavity-coupled molecular and 2D crystal systems are presented to demonstrate the method.
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http://dx.doi.org/10.1063/5.0230983 | DOI Listing |
Nanomaterials (Basel)
January 2025
State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China.
The integration of a photodetector that converts optical signals into electrical signals is essential for scalable integrated lithium niobate photonics. Two-dimensional materials provide a potential high-efficiency on-chip detection capability. Here, we demonstrate an efficient on-chip photodetector based on a few layers of MoTe on a thin film lithium niobate waveguide and integrate it with a microresonator operating in an optical telecommunication band.
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January 2025
Institute of Materials Science & Devices, School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou 215009, China.
Carbon catalysts have shown promise as an alternative to the currently available energy-intensive approaches for nitrogen fixation (NF) to urea, NH, or related nitrogenous compounds. The primary challenges for NF are the natural inertia of nitrogenous molecules and the competitive hydrogen evolution reaction (HER). Recently, carbon-based materials have made significant progress due to their tunable electronic structure and ease of defect formation.
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December 2024
State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, China.
As an emerging two-dimensional (2D) Group-VA material, bismuth selenide (BiSe) exhibits favorable electrical and optical properties. Here, three distinct morphologies of BiSe were obtained from bulk BiSe through electrochemical intercalation exfoliation. And the morphologies of these nanostructures can be tuned by adjusting solvent polarity during exfoliation.
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December 2024
Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Mexico City 04510, Mexico.
The electronic states in flat bands possess zero group velocity and null charge mobility. Recently, flat electronic bands with fully localized states have been predicted in nanowires, when their hopping integrals between first, second, and third neighbors satisfy determined relationships. Experimentally, these relationships can only be closely achieved under external pressures.
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December 2024
Department of Semiconductor Engineering, Hoseo University, Asan 31499, Republic of Korea.
A stacked nanocomposite zinc-tin oxide/single-walled carbon nanotubes (ZTO/SWNTs) active layer was fabricated for thin-film transistors (TFTs) as an alternative to the conventional single-layer structure of mixed ZTO and SWNTs. The stacked nanocomposite of the solution-processed TFTs was prepared using UV/O treatment and multiple annealing steps for each layer. The electrical properties of the stacked device were superior to those of the single-layer TFT.
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