Severity: Warning
Message: file_get_contents(https://...@pubfacts.com&api_key=b8daa3ad693db53b1410957c26c9a51b4908): Failed to open stream: HTTP request failed! HTTP/1.1 429 Too Many Requests
Filename: helpers/my_audit_helper.php
Line Number: 144
Backtrace:
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 144
Function: file_get_contents
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 212
Function: simplexml_load_file_from_url
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 3106
Function: getPubMedXML
File: /var/www/html/application/controllers/Detail.php
Line: 575
Function: pubMedSearch_Global
File: /var/www/html/application/controllers/Detail.php
Line: 489
Function: pubMedGetRelatedKeyword
File: /var/www/html/index.php
Line: 316
Function: require_once
A new double perovskite phase, Sr(SnSbIn)O, was successfully synthesized a solid-state reaction and comprehensively characterized using both experimental and theoretical techniques. Powder X-ray diffraction was used to determine the crystal structure, while scanning electron microscopy (SEM) revealed a high degree of densification and uniform grain distribution across the ceramic. Raman and Fourier-transform infrared (FTIR) absorption spectra of the powder present broad bands predominantly due to different stretching modes of the various SnO , InO and SbO octahedra in the region = 400-800 cm. An analysis of the UV-Vis diffuse reflectance spectrum shows excellent optical transparency and gives an estimation of an optical gap ∼ 3.6 eV on bulk Sr(SnSbIn)O, making this material a promising candidate for optoelectronic devices. Density Functional Theory calculations further validated the experimental findings, confirming the crystal structure and providing insight into the electronic and vibrational properties. Impedance spectroscopy revealed non-Debye dielectric relaxation and confirmed typical negative temperature coefficient of resistance (NTCR) behavior, underscoring the material's potential for temperature-sensing applications. The primary conduction mechanism, modeled as correlated barrier-hopping (CBH), was complemented by an Arrhenius-type process with activation energies of 0.33 eV and 0.9 eV across two distinct temperature ranges.
Download full-text PDF |
Source |
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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11472220 | PMC |
http://dx.doi.org/10.1039/d4ra05308g | DOI Listing |
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