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All-Epitaxial Self-Assembly of Silicon Color Centers Confined Within Sub-Nanometer Thin Layers Using Ultra-Low Temperature Epitaxy. | LitMetric

AI Article Synopsis

  • Silicon-based color-centers (SiCCs) are being developed as promising quantum-light sources for integration with telecom-range Silicon Photonics platforms.
  • Traditional methods for creating SiCCs face challenges in precisely controlling emitter positions due to random ion-implantation processes.
  • A new method using low-temperature epitaxial growth allows for precise positioning of SiCCs, enabling the formation of various types, including a newly identified G'-center, which shows potential for single-photon sources and improved optical properties.

Article Abstract

Silicon-based color-centers (SiCCs) have recently emerged as quantum-light sources that can be combined with telecom-range Si Photonics platforms. Unfortunately, using conventional SiCC fabrication schemes, deterministic control over the vertical emitter position is impossible due to the stochastic nature of the required ion-implantation(s). To overcome this bottleneck toward high-yield integration, a radically innovative creation method is demonstrated for various SiCCs with excellent optical quality, solely relying on the epitaxial growth of Si and C-doped Si at atypically-low temperatures in an ultra-clean growth environment. These telecom emitters can be confined within sub-nm thick epilayers embedded within a highly crystalline Si matrix at arbitrary vertical positions. Tuning growth conditions and doping, different well-known SiCC types can be selectively created, including W-centers, T-centers, G-centers, and, especially, a so far unidentified derivative of the latter, introduced as G'-center. The zero-phonon emission from G'-centers at ≈1300 nm can be conveniently tuned by the C-concentration, leading to a systematic wavelength shift and linewidth narrowing toward low emitter densities, which makes both, the epitaxy-based fabrication and the G'-center particularly promising as integrable Si-based single-photon sources and spin-photon interfaces.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11602677PMC
http://dx.doi.org/10.1002/adma.202408424DOI Listing

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