Severity: Warning
Message: file_get_contents(https://...@gmail.com&api_key=61f08fa0b96a73de8c900d749fcb997acc09): Failed to open stream: HTTP request failed! HTTP/1.1 429 Too Many Requests
Filename: helpers/my_audit_helper.php
Line Number: 143
Backtrace:
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 143
Function: file_get_contents
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 209
Function: simplexml_load_file_from_url
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 994
Function: getPubMedXML
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 3134
Function: GetPubMedArticleOutput_2016
File: /var/www/html/application/controllers/Detail.php
Line: 574
Function: pubMedSearch_Global
File: /var/www/html/application/controllers/Detail.php
Line: 488
Function: pubMedGetRelatedKeyword
File: /var/www/html/index.php
Line: 316
Function: require_once
Germanane (GeH) and silicane (SiH), members of the Xanes family, have garnered significant attention as 2D materials due to their diverse properties, which hold promise for applications in electronics, optoelectronics, energy storage, and sensing. Typically, highly concentrated hydrochloric acid (HCl) or hydrofluoric acid (HF) is employed in the synthesis of these Xanes, but both routes are problematic due to slow kinetics and safety concerns, respectively. Here for the first time, a faster and safer method is demonstrated for Xanes synthesis that harnesses the generation of HF "in situ" using a solution of HCl and lithium fluoride (LiF) salt, overcoming the key challenges of the conventional methods. A variety of characterization techniques to establish a baseline is utilized for both Xanes and to provide a holistic knowledge regarding this method, the possible consequences of this approach, and the possibility of applying it to other layered Zintl phases. The novel synthesis protocol results in high-quality GeH and SiH with bandgaps (E) of 1.75 and 2.47 eV respectively, highlighting their potential suitability for integration into semiconductor applications.
Download full-text PDF |
Source |
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http://dx.doi.org/10.1002/smtd.202400964 | DOI Listing |
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