Implantable neural electrodes are crucial in neurological diagnosis and therapy because of their ultra-high spatial resolution, but they are constrained by high impedance and insufficient charge injection capacity, resulting in noise that often obscures valuable signals. Emerging nanotechnologies are powerful tools to improve sensitivity and biocompatibility. Herein, we developed quantized 2D MoS electrodes by incorporating bioactive MoS nanosheets onto bare electrodes, achieving sensitive, compatible recording. The 2D materials can create tiny nanowells, which behaved as quantized charge storage units and thus improved sensitivity. The key sensitivity indicators, impedance and cathode charge storage capacity, showed a multifold increase. The 17.7-fold improvement in catalytic activity of MoS electrodes facilitated effective current transmission and reduced inflammatory response. recording showed that the sensitivity of local field potentials increased throughout frequency range and peaked at a 4.7-fold in β rhythm. This work provides a general strategy for achieving effective diagnoses of neurological disorders.
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http://dx.doi.org/10.1016/j.isci.2024.110949 | DOI Listing |
ACS Nano
January 2025
Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong 999077, China.
Dynamic random access memory (DRAM) has been a cornerstone of modern computing, but it faces challenges as technology scales down, particularly due to the mismatch between reduced storage capacitance and increasing OFF current. The capacitorless 2T0C DRAM architecture is recognized for its potential to offer superior area efficiency and reduced refresh rate requirements by eliminating the traditional capacitor. The exploration of two-dimensional (2D) materials further enhances scaling possibilities, though the absence of dangling bonds complicates the deposition of high-quality dielectrics.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Atomic layer deposition (ALD) of high-k dielectric films on MoS channels can lead to inadvertent remote electron doping of channels owing to nonequilibrium ALD conditions, such as the low temperatures and short purge times required for pinhole-free coating, as well as the weak physical adsorption of ALD precursors on MoS. In this study, we propose the application of a simple and effective HO vapor post-treatment (HO PT) at 100 °C immediately after complete integration of bottom- and top-gate monolayer MoS field-effect transistors (FETs), to address the inadvertent channel doping effect. When HO PT was applied to bottom-gate monolayer MoS FETs with an ALD-AlO passivation layer, the mitigation of channel doping was confirmed through electrical and optical measurements.
View Article and Find Full Text PDFLight Sci Appl
January 2025
Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, China.
Oxide materials with a non-centrosymmetric structure exhibit bulk photovoltaic effect (BPVE) but with a low cell efficiency. Over the past few years, relatively larger BPVE coefficients have been reported for two-dimensional (2D) layers and stacks with asymmety-induced spontaneous polarization. Here, we report a crucial breakthrough in boosting the BPVE in 3R-MoS by adopting edge contact (EC) geometry using bismuth semimetal electrode.
View Article and Find Full Text PDFSci Adv
January 2025
Department of Physics, Pusan National University, Busan 46241, Republic of Korea.
Metal electrode deposition is universally adopted in the community for optoelectronic device fabrication, inducing hybridization at electrode interfaces, and allows efficient extraction or injection of photocarriers. However, hybridization-induced midgap states increase photocarrier recombination pathways, creating a paradoxical trade-off. Here, we discovered that efficient photocarrier extraction and a long photocarrier lifetime can be achieved simultaneously in MoS/van der Waals Au contact, minimizing photocarrier loss at the interface.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Beijing Academy of Quantum Information Sciences, Beijing 100193, China.
Two-dimensional van der Waals (vdW) layered materials not only are an intriguing fundamental scientific research platform but also provide various applications to multifunctional quantum devices in the field-effect transistors (FET) thanks to their excellent physical properties. However, a metal-semiconductor (MS) interface with a large Schottky barrier causes serious problems for unleashing their intrinsic potentials toward the advancements in high-performance devices. Here, we show that exfoliated vdW Dirac semimetallic PtTe can be an excellent electrode for electrons in MoS FETs.
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