Nanoscale polar regions, or nanodomains (NDs), are crucial for understanding the domain structure and high susceptibility of relaxors. However, unveiling the evolution and function of NDs during polarization switching at the microscopic level is of great challenge. The experimental in situ characterization of NDs under electric-field perturbations, and computational accurate prediction of the dipole switching within a sufficiently large supercell, are notoriously tricky and tedious. These difficulties hinder a full understanding of the link between micro domain dynamics and macro polarization switching. Herein, the real-time evolution of NDs at the nanoscale is observed and visualized during polarization switching in an exemplary relaxor system of Bi LaMgTiO. Two fundamentally different domain switching pathways and dynamic characteristics are revealed: one steep, bipolar-like switching between two degenerate polarization states; and another flat, multi-step switching process with a thermodynamically stable non-polar mesophase mediating the degenerate polarization states. The two are determined by the distinct Landau energy landscapes that are strongly dependent on the intrinsic domain configurations and interdomain interactions. This work bridges the gap between micro domain dynamics and macro polarization switching, providing a guiding principle for the strategic design and optimization of relaxors.
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http://dx.doi.org/10.1002/adma.202411467 | DOI Listing |
Nano Lett
January 2025
Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.
Ferroelectric HfZrO (HZO) capacitors have been extensively explored for in-memory computing (IMC) applications due to their nonvolatility and back-end-of-line (BEOL) compatible process. Several IMC approaches using resistance and capacitance states in ferroelectric HZO have been proposed for vector-matrix multiplication (VMM), but previous approaches suffer from limited accuracy and reliability. In this work, we propose a promising approach centered on the remanent polarization (P) switching of binary ferroelectric HZO capacitor synapses.
View Article and Find Full Text PDFJ Cell Biol
April 2025
Department of Physics and Astronomy, University of Denver, Denver, CO, USA.
In the early Drosophila embryo, germband elongation is driven by oriented cell intercalation through t1 transitions, where vertical (dorsal-ventral aligned) interfaces contract and then resolve into new horizontal (anterior-posterior aligned) interfaces. Here, we show that contractile events produce a continuous "rectification" of cell interfaces, in which interfaces systematically rotate toward more vertical orientations. As interfaces rotate, their behavior transitions from elongating to contractile regimes, indicating that the planar polarized identities of cell-cell interfaces are continuously re-interpreted in time depending on their orientation angle.
View Article and Find Full Text PDFEur Heart J
January 2025
Department of Internal and Agricultural Medicine, Faculty of Medicine, Jagiellonian University Medical College, Krakow, Poland.
Nanophotonics
January 2025
Departamento de Ingeniería Electrónica, E.T.S.I. de Telecomunicación, Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM), Universidad Politécnica de Madrid, Madrid, 28040 Spain.
Polar biaxial crystals with extreme anisotropy hold promise for the spatial control and the manipulation of polaritons, as they can undergo topological transitions. However, taking advantage of these unique properties for nanophotonic devices requires to find mechanisms to modulate dynamically the material response. Here, we present a study on the propagation of surface phonon polaritons (SPhPs) in a photonic architecture based on a thin layer of α-MoO deposited on a semiconducting 4H-SiC substrate, whose carrier density can be tuned through photoinduction.
View Article and Find Full Text PDFSmall Methods
January 2025
School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China.
Optoelectronic synapse devices (OESDs) inspired by human visual systems enable to integration of light sensing, memory, and computing functions, greatly promoting the development of in-sensor computing techniques. Herein, dual-mode integration of bipolar response photodetectors (PDs) and artificial optoelectronic synapses based on ZnO/SnSe heterojunctions are presented. The function of the fabricated device can be converted between the PDs and OESDs by modulating the light intensity.
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