Multistate Ferroelectric Diodes with High Electroresistance Based on van der Waals Heterostructures.

Nano Lett

Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom.

Published: October 2024

AI Article Synopsis

  • - Some van der Waals materials, like CuInPS (CIPS), show ferroelectric properties, making them suitable for new types of nonvolatile memory devices, specifically ferroelectric diodes (FeDs).
  • - The study presented features FeDs built with CIPS and graphene that demonstrate impressive electrical characteristics, such as a high resistance ratio and a strong current rectification ratio at low voltages.
  • - CIPS-based FeDs allow for stable storage of multiple data bits due to the unique polarization states, pointing to their potential use in advanced computing applications like compute-in-memory and neuromorphic computing.

Article Abstract

Some van der Waals (vdW) materials exhibit ferroelectricity, making them promising for novel nonvolatile memories (NVMs) such as ferroelectric diodes (FeDs). CuInPS (CIPS) is a well-known vdW ferroelectric that has been integrated with graphene for memory devices. Here we demonstrate FeDs with self-rectifying, hysteretic current-voltage characteristics based on vertical heterostructures of 10 nm thick CIPS and graphene. By using vdW indium-cobalt top electrodes and graphene bottom electrodes, we achieve a high electroresistance (on- and off-state resistance ratios) of ∼10, an on-state rectification ratio of 2500 for read/write voltages of 2 V/0.5 V, and a maximum output current density of 100 A/cm. These metrics compare favorably with state-of-the-art FeDs. Piezoresponse force microscopy measurements show that stabilization of intermediate net polarization states in CIPS leads to stable multibit data retention at room temperature. The combination of two-terminal design, multibit memory, and low-power operation in CIPS-based FeDs is potentially interesting for compute-in-memory and neuromorphic computing applications.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11503766PMC
http://dx.doi.org/10.1021/acs.nanolett.4c03360DOI Listing

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