Exceptional interlayer coupling of organic-inorganic vdWHs is paramount for enhancing electron mobility. Herein, we report a novel transfer-free method to fabricate MoSe/Ni(HITP) vdWHs. The MOF film promotes interfacial charge transfer, leading to a threefold increase in electron mobility. This work provides a platform for developing high-performance optoelectronic devices.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1039/d4cc03869j | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Mass Acquisition of Dirac Fermions in Bi_{4}I_{4} by Spontaneous Symmetry Breaking.
Phys Rev Lett
December 2024
School of Physics, Beihang University, Haidian District, Beijing 100191, China.
Massive Dirac fermions, which are essential for realizing novel topological phenomena, are expected to be generated from massless Dirac fermions by breaking the related symmetry, such as time-reversal symmetry in topological insulators or crystal symmetry in topological crystalline insulators. Here, we report scanning tunneling microscopy and angle-resolved photoemission spectroscopy studies of α-Bi_{4}I_{4}, which reveals the realization of massive Dirac fermions in the (100) surface states without breaking the time-reversal symmetry. Combined with first-principles calculations, our experimental results indicate that the spontaneous symmetry breaking engenders two nondegenerate edge states at the opposite sides of monolayer Bi_{4}I_{4} after the structural phase transition, imparting mass to the Dirac fermions after taking the interlayer coupling into account.
View Article and Find Full Text PDFDistinct Charge and Spin Recovery Dynamics in a Photoexcited Mott Insulator.
Phys Rev Lett
December 2024
Harish-Chandra Research Institute, A CI of Homi Bhabha National Institute, Chhatnag Road, Jhusi, Allahabad 211019, India.
Pump-probe response of the spin-orbit coupled Mott insulator Sr_{2}IrO_{4} reveals a rapid creation of low-energy optical weight and suppression of three-dimensional magnetic order on laser pumping. Postpump there is a quick reduction of the optical weight but a very slow recovery of the magnetic order-the difference is attributed to weak interlayer exchange in Sr_{2}IrO_{4} delaying the recovery of three-dimensional magnetic order. We suggest that the effect has a very different and more fundamental origin.
View Article and Find Full Text PDFStacking-Engineered Ferroelectricity and Multiferroic Order in van der Waals Magnets.
Phys Rev Lett
December 2024
John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA.
Two-dimensional (2D) materials that exhibit spontaneous magnetization, polarization, or strain (referred to as ferroics) have the potential to revolutionize nanotechnology by enhancing the multifunctionality of nanoscale devices. However, multiferroic order is difficult to achieve, requiring complicated coupling between electron and spin degrees of freedom. We propose a universal method to engineer multiferroics from van der Waals magnets by taking advantage of the fact that changing the stacking between 2D layers can break inversion symmetry, resulting in ferroelectricity as well as magnetoelectric coupling.
View Article and Find Full Text PDFSpin Waves and Three Dimensionality in the High-Pressure Antiferromagnetic Phase of SrCu_{2}(BO_{3})_{2}.
Phys Rev Lett
December 2024
Laboratory for Quantum Magnetism, Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
Quantum magnetic materials can provide explicit realizations of paradigm models in quantum many-body physics. In this context, SrCu_{2}(BO_{3})_{2} is a faithful realization of the Shastry-Sutherland model for ideally frustrated spin dimers, even displaying several of its quantum magnetic phases as a function of pressure. We perform inelastic neutron scattering measurements on SrCu_{2}(BO_{3})_{2} at 5.
View Article and Find Full Text PDFStructural and electronic features enabling delocalized charge-carriers in CuSbSe.
Nat Commun
January 2025
Inorganic Chemistry Laboratory, University of Oxford, South Parks Road, Oxford, OX1 3QR, United Kingdom.
Inorganic semiconductors based on heavy pnictogen cations (Sb and Bi) have gained significant attention as potential nontoxic and stable alternatives to lead-halide perovskites for solar cell applications. A limitation of these novel materials, which is being increasingly commonly found, is carrier localization, which substantially reduces mobilities and diffusion lengths. Herein, CuSbSe is investigated and discovered to have delocalized free carriers, as shown through optical pump terahertz probe spectroscopy and temperature-dependent mobility measurements.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!