AI Article Synopsis

  • * By adding a branched polyethylenimine (PEI) layer to the commonly used PEDOT:PSS substrate, researchers improve film quality by reducing defects and increasing the proportion of high-quality large-n phases in the perovskite film.
  • * The resultant high-quality perovskite film leads to a flexible light-emitting diode achieving a current efficiency of 63.2 cd/A, significantly higher than 35.1 cd/A for devices without the PEI layer.

Article Abstract

The surface properties of target substrates are crucial for the in situ crystallization and growth of metal halide perovskite films fabricated by the anti-solvent method. In this work, a high-quality quasi-2D perovskite film with various-n phases is fabricated on the commonly used poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) by introducing a branched polyethylenimine (PEI) modifying layer. PEI suppresses the influence of acidic surface of the PEDOT:PSS and regulates the components of the perovskite film, increasing the proportion of large-n phases. Additionally, PEI reduces the formation of defects in perovskite films, leading to higher photoluminescence quantum efficiency and longer photoluminescence lifetime. Based on this high-quality perovskite film, a flexible light-emitting diode with an ultimate current efficiency of 63.2 cd/A is achieved, nearly twofold higher than that of the device (35.1 cd/A) without a PEI modifying layer.

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Source
http://dx.doi.org/10.1364/OL.537934DOI Listing

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