To enhance the high-temperature energy storage performance of the polymer-based dielectric film, inorganic nanofillers with large band gaps are much more effective and have been widely adopted. However, the impact of nanoparticle diameters on the dielectric properties of polymer nanocomposites has been less studied. Herein, silicon dioxide nanoparticles (SiO-NPs) with varying diameters (20, 60, 120, 200 nm) prepared by the sol-gel method are incorporated in the PEI matrix to form PEI/SiO nanocomposites. The characterization results reveal a distinct correlation between the dielectric properties of polyetherimide (PEI) composites and the diameters of SiO-NPs. Leakage current density analysis and breakdown strength simulations indicate that SiO-NPs with smaller diameters generate more deep traps that impede the transport of charge carriers, especially under high temperatures. Notably, PEI/20 nm-SiO exhibits a high discharged energy density of 4.4 J cm with an efficiency of 90% at 150 °C. Furthermore, PEI/SiO films with 10 µm in thickness are manufactured by a large-scale solution casting process. The continuously prepared PEI/20 nm-SiO film exhibits a discharged energy density of 3.2 J cm with an efficiency of 90% at 150 °C. This study not only provides a strategy for the design of high-performance dielectric polymer composites but also offers a large-scale high-temperature dielectric film for practical use.
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http://dx.doi.org/10.1002/smtd.202401059 | DOI Listing |
Polymers (Basel)
January 2025
Graduate School of Science and Technology, Niigata University, Niigata 950-2181, Japan.
Transitions seen in the electric properties of water-absorbable poly(2,5-benzimidazole) (ABPBI) films were confirmed by electric conductivity, dielectric constant, and time-domain nuclear magnetic resonance (NMR) measurements. The electric resistance of the films was measured at room temperature using a high-resistance meter, and the dielectric constant at room temperature was measured using an LCR meter in the frequency range of 90 Hz to 8 MHz. The water absorption ratio at equilibrium absorption for the films was 37%, which corresponded to a volume fraction of water of 0.
View Article and Find Full Text PDFSensors (Basel)
January 2025
School of Electronics and Information Engineering, Sichuan University, Chengdu 610064, China.
Potential applications of microwave energy, a developed form of clean energy, are diverse and extensive. To expand the applications of microwave heating in the metallurgical field, it is essential to obtain the permittivity of ores throughout the heating process. This paper presents the design of a 2.
View Article and Find Full Text PDFSensors (Basel)
January 2025
School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
For those piezoelectric materials that operate under high-power conditions, the piezoelectric and dielectric properties obtained under small signal conditions cannot be directly applied to high-power transducers. There are three mainstream high-power characterization methods: the constant voltage method, the constant current method, and the transient method. In this study, we developed and verified a combined impedance method that integrated the advantages of the constant voltage and current methods, along with an improved transient method, for high-power testing of PZT-5H piezoelectric ceramics.
View Article and Find Full Text PDFMaterials (Basel)
January 2025
Institute of Technology, University of the National Education Commission, Podchorążych 2, 30-084 Kraków, Poland.
In this work, three composite materials based on Terfenol-D and PZT-type material were obtained with a classic sintering method using a combination of 0-3 phases, where the ferroelectric phase was doped PZT material (P) and the magnetic phase was Terfenol-D (T). The percentage of P and T components in the composites was variable, i.e.
View Article and Find Full Text PDFMater Horiz
January 2025
Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca, New York 14853, USA.
As the demand for high-power-density microelectronics rises, overheating becomes the bottleneck that limits device performance. In particular, the heterogeneous integration architecture can magnify the importance of heat dissipation and necessitate electrical insulation between critical junctions to prevent dielectric breakdown. Consequently, there is an urgent need for thermal interface materials (TIMs) with high thermal conductivity and electrical insulation to address this challenge.
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