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Characterizing Defects Inside Hexagonal Boron Nitride Using Random Telegraph Signals in van der Waals 2D Transistors. | LitMetric

AI Article Synopsis

  • - The study focuses on single-crystal hexagonal boron nitride (hBN) and its defects, which are important for improving the performance of two-dimensional electronic and quantum devices.
  • - Low-frequency noise (LFN) spectroscopy was utilized to analyze defects in hBN within MoS field-effect transistors (FETs), revealing that random telegraph signals (RTS) come from a specific type of defect in hBN.
  • - Multispace density functional theory (MS-DFT) calculations showed that substitutional carbon atoms at boron sites are likely responsible for these defects, highlighting a method for effective characterization of atomic-level defects in hBN.

Article Abstract

Single-crystal hexagonal boron nitride (hBN) is used extensively in many two-dimensional electronic and quantum devices, where defects significantly impact performance. Therefore, characterizing and engineering hBN defects are crucial for advancing these technologies. Here, we examine the capture and emission dynamics of defects in hBN by utilizing low-frequency noise (LFN) spectroscopy in hBN-encapsulated and graphene-contacted MoS field-effect transistors (FETs). The low disorder of this heterostructure allows the detection of random telegraph signals (RTS) in large device dimensions of 100 μm at cryogenic temperatures. Analysis of gate bias- and temperature-dependent LFN data indicates that RTS originates from a single trap species within hBN. By performing multispace density functional theory (MS-DFT) calculations on a gated defective hBN/MoS heterostructure model, we assign substitutional carbon atoms in boron sites as the atomistic origin of RTS. This study demonstrates the utility of LFN spectroscopy combined with MS-DFT analysis on a low-disorder all-vdW FET as a powerful means for characterizing the atomistic defects in single-crystal hBN.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11503768PMC
http://dx.doi.org/10.1021/acsnano.4c06929DOI Listing

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