AI Article Synopsis
- AgSbTe, a p-type semiconductor, shows potential for thermoelectric performance in the 300-700 K range, but its effectiveness is hampered by low carrier concentration and AgTe impurities.
- Researchers synthesized AgSbCuTe with varying levels of Cu doping to analyze its impact on thermoelectric properties.
- Results show that Cu doping enhances the power factor by reducing AgTe impurities, increasing carrier concentration, and lowering thermal conductivity, achieving a peak performance of ~1.45 at 498 K.
Article Abstract
Recently, the p-type semiconductor AgSbTe has received a great deal of attention due to its promising thermoelectric performance in intermediate temperatures (300-700 K). However, its performance is limited by the suboptimal carrier concentration and the presence of AgTe impurities. Herein, we synthesized AgSbCuTe ( = 0, 0.02, 0.04, and 0.06) and investigated the effect of Cu doping on the thermoelectric properties of AgSbTe. Our results indicate that Cu doping suppresses the AgTe impurities, raises the carrier concentration, and results in an improved power factor (PF). The calculation reveals that Cu doping downshifts the Fermi energy level, reduces the energy band gap and the difference among several valence band maximums, and thereby explains the improvement of PF. In addition, Cu doping reduces the thermal conductivity, possibly attributed to the inhibition of AgTe impurities and the phonon softening of the AgSbCuTe. Overall, Cu doping improves the of AgSbCuTe. Among all samples, AgSbCuTe has a maximum of ∼1.45 at 498 K and an average of ∼1.11 from 298 to 573 K.
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| http://dx.doi.org/10.1021/acsami.4c05454 | DOI Listing |
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