Non-volatile photonic-electronic memory via 3D monolithic ferroelectric-silicon ring resonator.

Light Sci Appl

Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China.

Published: September 2024

A novel non-volatile photonic-electronic memory, 3D integrating an Al-doped HfO ferroelectric thin film onto a silicon photonic platform using fully compatible electronic and photonic fabrication processes, enables electrically/optically programmable, non-destructively readable, and multi-level storage functions.

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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11427707PMC
http://dx.doi.org/10.1038/s41377-024-01625-9DOI Listing

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