AI Article Synopsis

  • - The study focuses on the thermal conductivity of β-GaO, emphasizing its significance for high-voltage and high-temperature uses, while highlighting unresolved discrepancies in calculated values along different crystal directions.
  • - It finds that understanding chemical bonding is key to resolving these discrepancies, especially in low-symmetry structures like β-GaO, which require large supercells to accurately capture a variety of bonding interactions.
  • - The research reveals that modeling bonding characteristics leads to better estimation of acoustic and optical contributions to thermal conductivity and shows that third-order interaction terms are sufficient for accurate calculations, aligning well with experimental data.

Article Abstract

Understanding the lattice thermal conductivity () of β-GaO is very intriguing owing to its advantages in high-voltage and high-temperature applications. Despite several attempts, the underlying mechanism and causes of the notable discrepancies found in the values of β-GaO along [100] and [001] directions calculated using first principles remained unresolved. We demonstrate that the understanding of the nature of chemical bonding is crucial to overcome the inconsistency in theoretically reported values. In low-symmetry structures such as β-GaO, the nature of the interactions is primarily long-range; therefore, a sufficiently large supercell inclusive of various bonding characteristics is required to capture relevant phonon wavelengths. Bonding nature-aware structure modeling allows precise estimation of acoustic and optical mode contributions towards . Additionally, phonon mean free path analysis confirms that considering only third-order interaction terms is adequate to determine the of β-GaO. The calculated values are in excellent agreement with experimentally reported values in all three directions. Our results establish that the bonding nature and its influence on phonon scattering are essential to consider in calculating accurately.

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Source
http://dx.doi.org/10.1039/d4dt02033bDOI Listing

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