Rapid recombination of charge carriers in semiconductors is a main drawback for photocatalytic oxidative coupling of methane (OCM) reactions. Herein, we propose a novel catalyst by developing a p-n junction titania-silicon nanowires (TiO/SiNWs) heterostructure. The structure is fabricated by atomic layer deposition of TiO on p-type SiNWs. The TiO/SiNWs heterostructure exhibited an outstanding OCM performance under simulated solar light irradiation compared to the single components. This enhanced efficiency was attributed to the intrinsic electrical field formed between n-type TiO and p-type SiNWs, which forces generated charge carriers to move in opposite directions and suppresses charge recombination. Besides, surface morphology and optical properties of the the p-n TiO/SiNWs catalyst are also beneficial for the photocatalytic activity. It is expected that the results of this study will provide massive guidance in synthesizing an efficient photocatalyst for CH conversion under mild conditions.
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http://dx.doi.org/10.3762/bjnano.15.92 | DOI Listing |
Nat Commun
January 2025
International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China.
The anomalous photovoltaic effect (APE) in polar crystals is a promising avenue for overcoming the energy conversion efficiency limits of conventional photoelectric devices utilizing p-n junction architectures. To facilitate effective photocarrier separation and enhance the APE, polar materials need to be thinned down to maximize the depolarization field. Here, we demonstrate Janus MoSSe monolayers (~0.
View Article and Find Full Text PDFChemSusChem
January 2025
Korea Institute of Energy Technology, Energy Engineering, 21 KENTECH-gil, 58330, Naju-si, KOREA, REPUBLIC OF.
Cu2O has attracted significant attention as a potential photocatalyst for CO2 reduction. However, its practical use is limited by rapid charge recombination, insufficient catalytic sites, and poor stability. In this study, we report a facile synthesis of Cu2O@BiOCl core-shell hybrids with well-defined shape of Cu2O and two-dimensional nanosheet structure of BiOCl.
View Article and Find Full Text PDFNat Commun
January 2025
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
Hardware implementation of reconfigurable and nonvolatile photoresponsivity is essential for advancing in-sensor computing for machine vision applications. However, existing reconfigurable photoresponsivity essentially depends on the photovoltaic effect of p-n junctions, which photoelectric efficiency is constrained by Shockley-Queisser limit and hinders the achievement of high-performance nonvolatile photoresponsivity. Here, we employ bulk photovoltaic effect of rhombohedral (3R) stacked/interlayer sliding tungsten disulfide (WS) to surpass this limit and realize highly reconfigurable, nonvolatile photoresponsivity with a retinomorphic photovoltaic device.
View Article and Find Full Text PDFBiomaterials
December 2024
Key Laboratory for Liquid-Solid Structural Evolution & Processing of Materials (Ministry of Education), School of Materials Science and Engineering, Shandong University, Jinan, Shandong, 250061, PR China. Electronic address:
Chronic diabetic wound poses a pressing global healthcare challenge, necessitating an approach to address issues such as pathogenic bacteria elimination, blood sugar regulation, and angiogenesis stimulation. Herein, we engineered a BiWO@CuO-GOx bio-heterojunction (BWCG bio-HJ) with exceptional cascade catalytic performance and impressive sonosensitivity to remodel the wound microenvironment and expedite the diabetic wound healing. Specifically, the Z-scheme junctions of BiWO@CuO significantly augmented carrier separation dynamics, leading to the highly efficient generation of reactive oxygen species (ROS) upon US irradiations.
View Article and Find Full Text PDFNanomaterials (Basel)
December 2024
State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, National Engineering Research Center of Wide Band-Gap Semiconductor, School of Microelectronics, Xidian University, Xi'an 710071, China.
This study systematically investigates the effects of anode metals (Ti/Au and Ni/Au) with different work functions on the electrical and temperature characteristics of β-GaO-based Schottky barrier diodes (SBDs), junction barrier Schottky diodes (JBSDs) and P-N diodes (PNDs), utilizing Silvaco TCAD simulation software, device fabrication and comparative analysis. From the perspective of transport characteristics, it is observed that the SBD exhibits a lower turn-on voltage and a higher current density. Notably, the V of the Ti/Au anode SBD is merely 0.
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