Atomic Basal Defect-Rich MoS by One-Step Synthesis and Mechanism Exploration.

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NMR and Molecular Imaging Laboratory, Department of General, Organic and Biomedical Chemistry, University of Mons, 19 Avenue Maistriau, Mons, 7000, Belgium.

Published: September 2024

AI Article Synopsis

  • Two-dimensional molybdenum disulfide (2D MoS) has potential for surface-enhanced Raman scattering (SERS) due to strong exciton resonance, but its inert basal plane hinders effectiveness.
  • A new one-step synthesis method introduces atomic defects, specifically single sulfur vacancies, by using NaCl, which facilitates both rapid growth and defect formation during cooling.
  • SERS tests show that the defect-rich MoS can detect rhodamine 6G at 10m concentrations, comparable to noble metal substrates, indicating this activation strategy could improve performance in various applications beyond SERS.

Article Abstract

Two-dimensional molybdenum disulfide (2D MoS) shows great promise as a surface-enhanced Raman scattering (SERS) substrate due to its strong exciton resonance. However, the inert basal plane limits the performance of SERS. In this work, a strategy is proposed for the one-step synthesis of atomically basal defect-rich MoS. The study first reveals that NaCl plays a two-stage role in the growth process, where NaCl initially promotes the rapid growth of large MoS as previously reported, and then promotes the formation of atomic basal defects dominated by single sulfur vacancies. Additionally, spectral changes induced by modulation of experimental parameters and density function theory calculation show that defect generation occurs during cooling. Meanwhile, the ratio of to A in defect-rich MoS exhibits different variation trends compared with pristine MoS in power-dependent Raman, and the ratio increases with increasing basal defects. In SERS tests, the limit of detection for rhodamine 6G reached 10m, which is comparable to the performance of conventional noble metal SERS substrate. The activation strategy of the inert basal plane is applicable to other 2D transition metal dichalcogenides, and further has the potential to enhance performance in other domains, such as SERS and hydrogen evolution reactions.

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http://dx.doi.org/10.1002/smll.202404684DOI Listing

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