Single-photon avalanche diodes (SPADs) belong to a family of avalanche photodiodes (APDs) with single-photon detection capability that operate above the breakdown voltage (i.e., Geiger mode). Design and technology constraints, such as dark current, photon detection probability, and power dissipation, impose inherent device limitations on avalanche photodiodes. Moreover, after the detection of a photon, SPADs require dead time for avalanche quenching and recharge before they can detect another photon. The reduction in dead time results in higher efficiency for photon detection in high-frequency applications. In this work, an electronic interface, based on the pole-zero compensation technique for reducing dead time, was investigated. A nanosecond pulse generator was designed and fabricated to generate pulses of comparable voltage to an avalanche transistor. The quenching time constant (τ) is not affected by the compensation capacitance variation, while an increase of about 30% in the τ is related to the properties of the specific op-amp used in the design. Conversely, the recovery time was observed to be strongly influenced by the compensation capacitance. Reductions in the recovery time, from 927.3 ns down to 57.6 ns and 9.8 ns, were observed when varying the compensation capacitance in the range of 5-0.1 pF. The experimental results from an SPAD combined with an electronic interface based on an avalanche transistor are in strong accordance, providing similar output pulses to those of an illuminated SPAD.

Download full-text PDF

Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11398220PMC
http://dx.doi.org/10.3390/s24175568DOI Listing

Publication Analysis

Top Keywords

electronic interface
12
dead time
12
compensation capacitance
12
single-photon avalanche
8
avalanche diodes
8
avalanche photodiodes
8
photon detection
8
interface based
8
avalanche transistor
8
recovery time
8

Similar Publications

Heterojunctions, known for their decent separation of photo-generated electrons and holes, are promising for photocatalytic CO reduction. However, a significant obstacle in traditional post-assembled heterojunctions is the high interfacial barrier for charge transfer caused by atomic lattice mismatch at multiphase interfaces. Here, as research prototypes, the study creates a lattice-matched co-atomic interface within CsPbBr-CsPbBr polytypic nanocrystals (113-125 PNs) through the proposed in situ hybrid strategy to elucidate the underlying charge transfer mechanism within this unique interface.

View Article and Find Full Text PDF

Skin-like bioelectronics offer a transformative technological frontier, catering to continuous and real-time yet highly imperceptible and socially discreet digital healthcare. The key technological breakthrough enabling these innovations stems from advancements in novel material synthesis, with unparalleled possibilities such as conformability, miniature footprint, and elasticity. However, existing solutions still lack desirable properties like self-adhesivity, breathability, biodegradability, transparency, and fail to offer a streamlined and scalable fabrication process.

View Article and Find Full Text PDF

Structural basis of Epstein-Barr virus gp350 receptor recognition and neutralization.

Cell Rep

January 2025

State Key Laboratory of Oncology in South China, Guangdong Provincial Clinical Research Center for Cancer, Guangdong Key Laboratory of Nasopharyngeal Carcinoma Diagnosis and Therapy, Sun Yat-sen University Cancer Center, Guangzhou 510060, China. Electronic address:

Epstein-Barr virus (EBV) is an oncogenic virus associated with multiple lymphoid malignancies and autoimmune diseases. During infection in B cells, EBV uses its major glycoprotein gp350 to recognize the host receptor CR2, initiating viral attachment, a process that has lacked direct structural evidence for decades. In this study, we resolved the structure of the gp350-CR2 complex, elucidated their key interactions, and determined the site-specific N-glycosylation map of gp350.

View Article and Find Full Text PDF

Highly Thermal-Conductive Cubic Boron Arsenide: Single-Crystal Growth, Properties, and Future Thin-Film Epitaxy.

J Phys Chem Lett

January 2025

College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, P.R. China.

Heat dissipation has become a critical challenge in modern electronics, driving the need for a revolution in thermal management strategies beyond traditional packaging materials, thermal interface materials, and heat sinks. Cubic boron arsenide (c-BAs) offers a promising solution, thanks to its combination of high thermal conductivity and high ambipolar mobility, making it highly suitable for applications in both electronic devices and thermal management. However, challenges remain, particularly in the large-scale synthesis of a high-quality material and the tuning of its physical properties.

View Article and Find Full Text PDF

Impact of the Electrode Material on the Performance of Light-Emitting Electrochemical Cells.

ACS Appl Mater Interfaces

January 2025

The Organic Photonics and Electronics Group, Department of Physics, Umeå University, SE-90187 Umeå, Sweden.

Light-emitting electrochemical cells (LECs) are promising candidates for fully solution-processed lighting applications because they can comprise a single active-material layer and air-stable electrodes. While their performance is often claimed to be independent of the electrode material selection due to the in situ formation of electric double layers (EDLs), we demonstrate conceptually and experimentally that this understanding needs to be modified. Specifically, the exciton generation zone is observed to be affected by the electrode work function.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!