The space charge layer (SCL) dilemma, caused by mobile anion concentration gradient and the rapid consumption of cations, is the fundamental reason for the generation of zinc dendrites, especially under high-rate discharge conditions. To address the issue, a physical (PbTiO)/chemical (AMPS-Zn) barrier is designed to construct stable zinc ion flow and disrupt the gradient of anion concentration by coupling the ferroelectric effect with tethered anion electrolyte. The ferroelectric materials PbTiO with extreme-high piezoelectric constant can spontaneously generate an internal electric field to accelerate the movement of zinc ions, and the polyanionic polymer AMPS-Zn can repel mobile anions and disrupt the anions concentration gradient by tethering anions. Through numerical simulations and analyses, it is discovered that a high Zn transference number can effectively weaken the SCL, thus suppressing the occurrence of zinc dendrites and parasitic side reactions. Consequently, an asymmetric cell using the PbTiO@Zn demonstrates a reversible plating/stripping performance for 2900 h, and an asymmetric cell reaches a state-of-the-art runtime of 3450 h with a high average Coulombic efficiency of 99.98%. Furthermore, the PbTiO@Zn/I battery demonstrated an impressive capacity retention rate of 84.0% over 65000 cycles by employing a slender Zn anode.
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http://dx.doi.org/10.1002/adma.202407390 | DOI Listing |
Nat Commun
December 2024
Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA.
Discontinuous solid-solid phase transformations play a pivotal role in determining the properties of rechargeable battery electrodes. By leveraging operando Bragg Coherent Diffractive Imaging (BCDI), we investigate the discontinuous phase transformation in LiNiMnO within an operational Li metal coin cell. Throughout Li-intercalation, we directly observe the nucleation and growth of the Li-rich phase within the initially charged Li-poor phase in a 500 nm particle.
View Article and Find Full Text PDFAIP Adv
December 2024
Center for Natural Sciences, University of Pannonia, Egyetem u. 10, Veszprém 8200, Hungary.
We present simulation results for the Donnan equilibrium between a homogeneous bulk reservoir and inhomogeneous confining geometries with varying number of restricted dimensions, . Planar slits ( = 1), cylindrical pores ( = 2), and spherical cavities ( = 3) are considered. The walls have a negative surface charge density.
View Article and Find Full Text PDFEnviron Res
December 2024
School of Mechanical Science and Engineering, Northeast Petroleum University, Daqing, 163318, China.
Porous carbon adsorption represents a critical component of CCUS technologies, with microporous structures playing an essential role in CO capture. The preparation of porous carbon introduces intrinsic defects, making it essential to consider both pore size and these defects for a comprehensive understanding of the CO adsorption mechanism. This study investigates the mechanisms of CO adsorption influenced by intrinsic defects and pore size using multiscale methods, incorporating experimental validation, Grand Canonical Monte Carlo simulations, and Density Functional Theory simulations.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
High-performance, environmentally friendly indium phosphide (InP)-based quantum dots (QDs) are urgently needed to meet the demands of rapidly evolving display and lighting technologies. By adopting the highly efficient and cost-effective one-pot method and utilizing aluminum isopropoxide (AIP) as the Al source, a series of Al-doped InP/(Al)ZnS QDs with emission maxima ranging from 480 to 627 nm were synthesized. The photoluminescence quantum yield (PLQY) of the blue, green, yellow, orange, and red QDs, with emission peaks at 480, 509, 560, 600, and 627 nm, reached 34%, 62%, 86%, 96%, and 85%, respectively.
View Article and Find Full Text PDFAdv Mater
December 2024
Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK.
High contact resistance remains the primary obstacle that hinders further advancements of organic semiconductors (OSCs) in electronic circuits. While significant effort has been directed toward lowering the energy barrier at OSC/metal contact interfaces, approaches toward reducing another major contributor to overall contact resistance - the bulk resistance - have been limited to minimizing the thickness of OSC films. However, the out-of-plane conductivity of OSCs, a critical aspect of bulk resistance, has largely remained unaddressed.
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