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Magnetoresistance is a key phenomenon in technology that helps in detecting magnetic states used in data storage and sensors.
Recent research has introduced a new form called bilinear magnetoelectric resistance (BMER), which depends on both electric and magnetic fields.
The study suggests that BMER is a broad phenomenon linked to the spin Hall effect, particularly in three-dimensional systems without specific spin textures, and could play an important role in advanced magnetic technology.
Article Abstract
Magnetoresistance is a fundamental transport phenomenon that is essential for reading the magnetic states for various information storage, innovative computing and sensor devices. Recent studies have expanded the scope of magnetoresistances to the nonlinear regime, such as a bilinear magnetoelectric resistance (BMER), which is proportional to both electric field and magnetic field. Here we demonstrate that the BMER is a general phenomenon that arises even in three-dimensional systems without explicit momentum-space spin textures. Our theory suggests that the spin Hall effect enables the BMER provided that the magnitudes of spin accumulation at the top and bottom interfaces are not identical. The sign of the BMER follows the sign of the spin Hall effect of heavy metals, thereby evidencing that the BMER originates from the bulk spin Hall effect. Our observation suggests that the BMER serves as a general nonlinear transport characteristic in three-dimensional systems, especially playing a crucial role in antiferromagnetic spintronics.
