Ion migration in p-type perovskite MAPbI films under an electric field and thin-film transistor device failure.

Chem Commun (Camb)

Key Laboratory of Yunnan Provincial Higher Education Institutions for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming 650504, China.

Published: September 2024

AI Article Synopsis

  • The study analyzed how ions move in p-type perovskite MAPbI films when an electric field is applied, highlighting the negative impact on device performance.
  • It found that ion migration could seriously hinder the efficiency of MAPbI-based devices.
  • To address this issue, the researchers suggested using additives to reduce ion migration, which could help create better-performing MAPbI-based devices.

Article Abstract

This study demonstrated a dynamic analysis to investigate the ion migration in p-type perovskite MAPbI films under an electric field, revealing its detrimental effects on the electrical performance of MAPbI-based devices. An additive strategy was proposed to suppress ion migration, thereby facilitating the fabrication of high-performance MAPbI-based devices.

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Source
http://dx.doi.org/10.1039/d4cc03446eDOI Listing

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