The binary boron-rich compounds α-IrB and β-IrB, formerly denoted as α- and β-IrB, were synthesized both arc melting followed by annealing at 800 °C (900 °C) and high-temperature thermal treatment of mixtures of the elements. X-ray structure analysis of α-IrB was performed on a single crystal (space group 2/, = 10.5515(11) Å, = 2.8842(3) Å, = 6.0965(7) Å, = 91.121(9)°). The orthorhombic structure of β-IrB was confirmed by X-ray powder diffraction (space group ; = 10.7519(3) Å, = 2.83193(7) Å, = 6.0293(1) Å). The α-IrB structure exhibits ordered arrangements of iridium atoms. The structure is composed of corrugated layers of boron hexagons (interlinked external B-B bonds) alternating with two corrugated layers of iridium along the -direction; an additional boron atom (Oc. 0.46(7)) is located between iridium layers in Ir trigonal prisms. The boron partial structure in β-IrB is composed of ribbons made up of slightly corrugated quadrilateral units running along the -direction in the channels formed by 8 iridium atoms each. DFT calculations revealed a number of bands crossing the Fermi level, predicting metallic behaviors of the two compounds. β-IrB is characterized by a pseudogap around the Fermi level and a smaller eDOS of 0.6405 states per eV per f.u. at the Fermi level, as compared to the α-IrB value of 1.405 states per eV per f.u. The calculated electron localization functions revealed strong covalent bonds between boron atoms in the core part of the B hexagons, metallic B-B bonds within the quadrilateral boron partial structure and mixed covalent and metallic interactions between iridium and boron atoms. Structural relationships of α-IrB and β-IrB with ReB-type structures as well as the common structural features with layered binary borides with CrB-type related structures have been discussed.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1039/d4dt02095b | DOI Listing |
ACS Nano
January 2025
School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia.
Van der Waals electrode integration is a promising strategy to create nearly perfect interfaces between metals and 2D materials, with advantages such as eliminating Fermi-level pinning and reducing contact resistance. However, the lack of a simple, generalizable pick-and-place transfer technology has greatly hampered the wide use of this technique. We demonstrate the pick-and-place transfer of prefabricated electrodes from reusable polished hydrogenated diamond substrates without the use of any sacrificial layers due to the inherent low-energy and dangling-bond-free nature of the hydrogenated diamond surface.
View Article and Find Full Text PDFACS Sens
January 2025
State Key Laboratory of Materials Processing and Die Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), No. 1037, Luoyu Road, Wuhan 430074, P. R. China.
High selectivity and sensitivity sensing of HS gas play a decisive role in the early detection of sulfide solid-state battery failure. Herein, we construct the CsPbBr perovskite-based sensor that exhibits outstanding gas-sensing performance to HS at room temperature, including high selectivity, fast response/recovery speed (73.5/275.
View Article and Find Full Text PDFSci Technol Adv Mater
January 2025
Magnetic Functional Device Group, Research Center for Magnetic and Spintronic Materials (CMSM), National Institute for Materials Science (NIMS), Tsukuba, Japan.
We demonstrate high-throughput evaluation of the half-metallicity of CoMnSi Heusler alloys by spin-integrated hard X-ray photoelectron spectroscopy (HAXPES) of composition-spread films performed with high-brilliance synchrotron radiation at NanoTerasu, which identifies the optimum composition showing the best half-metallicity. Co Mn Si composition-spread thin films for = 10-40% with a thickness of 30 nm are fabricated on MgO(100) substrates using combinatorial sputtering technique. The 2-ordering and (001)-oriented epitaxial growth of CoMnSi are confirmed by X-ray diffraction for = 18-40%.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States.
Majorana zero modes are predicted to emerge in semiconductor/superconductor interfaces, such as InAs/Al. Majorana modes could be utilized for fault tolerant topological qubits. However, their realization is hindered by materials challenges.
View Article and Find Full Text PDFJ Colloid Interface Sci
January 2025
Key Laboratory of Beijing on Regional Air Pollution Control, Department of Environmental Science, College of Environmental Science & Engineering, Beijing University of Technology, Beijing 100124 China. Electronic address:
Photocatalytic CO reduction technology plays a significant role in the energy and environmental sectors, highlighting the necessity for developing high-efficiency and stable catalysts. In this study, a novel photocatalyst, xNiCoO/CN (x = 1, 3, and 5 wt%), was synthesized by depositing zeolitic imidazolate framework-67 (ZIF-67)-derived nickel cobaltate (NiCoO) hollow nanocages onto porous graphitic carbon nitride (g-CN, CN) nanosheets for photocatalytic CO reduction. Under visible light irradiation, the resulting 3NiCoO/CN photocatalyst demonstrated exceptional CO yields of up to 2879.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!