Potassium-containing transition metal layered oxides (KTmO), although possessing high energy density and suitable operating voltage, suffer from severe hygroscopic properties due to their two dimensional (2D) layered structure. Their air sensitivity compromises structural stability during prolonged air exposure, therefore increasing the cost. The common sense for designing air-stable layered cathode materials is to avoid contact with HO molecules. In this study, it is surprisingly found that P3-type KTmO forms an ultra-thin, potassium-rich spinel phase wrapping layer after simply water immersion, remarkedly reduces the reaction activity of the material's surface with air. Combined with Density Function Theory (DFT) calculations, this spinel phase is found to be able to effectively withstand air deterioration and preserving the crystal structure. Consequently, the water-treated material, when exposed to air, can largely maintain its good electrochemical performance, with capacity retention up to 99.15% compared to the fresh samples. Such an in situ surface phase transformation mechanism is also corroborated in other KTmO, underscoring its effectiveness in enhancing the air stability of P3-type layered oxides for K storage.
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http://dx.doi.org/10.1002/adma.202407980 | DOI Listing |
ACS Appl Mater Interfaces
January 2025
The Organic Photonics and Electronics Group, Department of Physics, Umeå University, SE-90187 Umeå, Sweden.
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Institut Parisien de Chimie Moléculaire, Chimie des Polymères, UMR CNRS 8232, Sorbonne Université, 4 place Jussieu, Paris 75005, France.
ACS Nano
January 2025
University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, P. R. China.
Few-layer violet phosphorus (VP) shows excellent potential in optoelectronic applications due to its unique in-plane anisotropy and high mobility. However, the poor air stability of VP severely limits its practical applications. This article reports highly air-stable VP obtained by a two-step nitrogen plasma treatment where the nitrogen volume flow rate is controlled to coordinate physical etching and chemical doping.
View Article and Find Full Text PDFNanotechnology
December 2024
Universidad de Chile, Blanco Encalada 2008, Santiago de Chile, 1025000, CHILE.
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November 2024
Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 3, 9747 AG Groningen, The Netherlands.
Tin halide perovskites are promising for optoelectronics, although their sensitivity to ambient conditions due to Sn(II) oxidation presents a challenge. Encapsulation techniques can mitigate degradation and facilitate advanced studies of the intrinsic properties. To study and improve the ambient stability of CsSnBr and CsSnI nanocrystal (NC) thin films, we explored various encapsulation methods: organic, inorganic, and hybrid.
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