AI Article Synopsis
- Ultra-low loss silicon nitride can be produced using deuterated precursors, which helps reduce energy loss in optical devices.
- This method operates at low thermal budgets, making it compatible with backend-of-line processing in CMOS technology.
- The advancement in this material could lead to its broader adoption in various applications, particularly in electronics and photonics.
Article Abstract
Ultra-low loss silicon nitride realized using deuterated precursors and low thermal budgets well within backend-of-line CMOS processing may accelerate widespread proliferation of their use.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11374801 | PMC |
| http://dx.doi.org/10.1038/s41377-024-01576-1 | DOI Listing |
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