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A singlet-triplet hole-spin qubit in MOS silicon. | LitMetric

AI Article Synopsis

  • Silicon quantum dots are being explored for spin qubit applications because of their strong intrinsic spin-orbit coupling, which influences hole-spin dynamics.
  • The study demonstrates a singlet-triplet qubit using hole states in a metal-oxide-semiconductor double quantum dot, achieving rapid control with oscillations up to 400 MHz and a maximum coherence time of 1.3 μs.
  • This research identifies ways to enhance qubit performance and lays the groundwork for scaling up to larger arrays of qubits in two-dimensional configurations.

Article Abstract

Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics, providing opportunities to further optimise spin qubits. Here, we demonstrate a singlet-triplet qubit using hole states in a planar metal-oxide-semiconductor double quantum dot. We demonstrate rapid qubit control with singlet-triplet oscillations up to 400 MHz. The qubit exhibits promising coherence, with a maximum dephasing time of 600 ns, which is enhanced to 1.3 μs using refocusing techniques. We investigate the magnetic field anisotropy of the eigenstates, and determine a magnetic field orientation to improve the qubit initialisation fidelity. These results present a step forward for spin qubit technology, by implementing a high quality singlet-triplet hole-spin qubit in planar architecture suitable for scaling up to 2D arrays of coupled qubits.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11372177PMC
http://dx.doi.org/10.1038/s41467-024-51902-9DOI Listing

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