P-type organic cathode materials typically exhibit high redox potentials and fast redox kinetics, presenting broad application prospects in aqueous zinc batteries (AZBs). However, most of the reported p-type organic cathode materials exhibit limited capacity (<100 mAh g), which is attributable to the low mass content ratio of oxidation-reduction active functional groups in these materials. Herein, we report a high-capacity p-type organic material, 5,12-dihydro-5,6,11,12-tetraazatetracene (DHTAT), for aqueous zinc batteries. Both experiments and calculation indicate the charge storage of DHTAT mainly involves the adsorption/desorption of ClO on the -NH- group. Benefitting from the high mass content ratio of the -NH- group in DHATA molecule, the DHATA electrode demonstrates a remarkable capacity of 224 mAh g at a current density of 50 mA g with a stable voltage of 1.12 V. Notably, after 5000 cycles at a high current density of 5 A g, DHTAT retains 73 % of its initial capacity, showing a promising cycling stability. In addition, DHTAT also has good low-temperature performance and can stably cycle at -40 °C for 4000 cycles at 1 A g, making it a competitive candidates cathode material for low-temperature batteries.
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http://dx.doi.org/10.1002/anie.202410342 | DOI Listing |
ACS Appl Mater Interfaces
January 2025
Chandra Family Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United States.
A device architecture based on heterostructure WSe/organic semiconductor field-effect transistors (FETs) is demonstrated in which ambipolar conduction is virtually eliminated, resulting in essentially unipolar FETs realized from an ambipolar semiconductor. For p-channel FETs, an electron-accepting organic semiconductor such as hexadecafluorocopperphthalocyanine (FCuPc) is used to form a heterolayer on top of WSe to effectively trap any undesirable electron currents. For n-channel FETs, a hole-accepting organic semiconductor such as pentacene is used to reduce the hole currents without affecting the electron currents.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
School of Materials and Energy, Lanzhou University (LZU), Lanzhou 730000, China.
Complementary neural network circuits combining multifunctional high-performance p-type with n-type organic artificial synapses satisfy sophisticated applications such as image cognition and prosthesis control. However, implementing the dual-modal memory features that are both volatile and nonvolatile in a synaptic transistor is challenging. Herein, for the first time, we propose a single vertical n-type organic synaptic transistor (VNOST) with a novel polymeric organic mixed ionic-electronic conductor as the core channel material to achieve dual-modal synaptic learning/memory behaviors at different operating current densities via the formation of an electric double layer and the reversible ion doping.
View Article and Find Full Text PDFMacromol Rapid Commun
January 2025
Institute of Polymer Optoelectronic Materials and Devices, Guangdong Basic Research Center of Excellence for Energy and Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China.
Simultaneous improvement in power conversion efficiency (PCE) and device stability is very important for organic solar cells (OSCs). Herein, oligothiophene-based polymer W19 with excellent solvent resistance is exploited as a polymer thin layer to optimize the active layer morphology and then device efficiency and stability. Polymer W19 possesses a simple skeleton of trifluromethyl-substituted dithienoquinoxaline and quaterthiophene, whose thin layer shows suitable energy level, low surface energy, and strong interchain aggregation, leading to outstanding solvent resistance and excellent hole transport ability.
View Article and Find Full Text PDFAdv Sci (Weinh)
January 2025
Key Laboratory of Functional Molecular Solids, Ministry of Education, School of Chemistry and Materials Science, Anhui Normal University, No.189, Jiuhua South Road, Wuhu, Anhui, 241002, China.
Developing low-cost unipolar n-type organic thin-film transistors (OTFTs) is necessary for logic circuits. To achieve this objective, the usage of new electron-deficient building blocks with simple structure and easy synthetic route is desirable. Among all electron-deficient building units, N-oxide-functionalized bipyridines can be prepared through a simple oxidized transformation of bipyridines.
View Article and Find Full Text PDFNano Lett
January 2025
School of Advanced Materials, Shenzhen Graduate School, Peking University, Shenzhen 518055, P. R. China.
The high responsivity and broad spectral sensitivity of organic photodetectors (OPDs) present a bright future of commercialization. However, the relatively high dark current density still limits its development. Herein, two novel nonpolar p-type conjugated small molecules, NSN and NSSN, are synthesized as interface layers to enhance the performance of the OPDs, which not only can tune energy alignments and increase the reverse charge injection barrier but also can reduce the interfacial trap density.
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