Rare earth (RE) dopants can modulate the bandgap of oxides of indium and gallium and provide extra upconversion luminescence (UCL) abilities. However, relevant UCL fine-tuning strategies and energy mechanisms have been less studied. In this research, InGaO, Ho monodoped and Yb/Ho codoped InO, and Ho monodoped YbGaO nanoparticles (NPs) were synthesized by a solvothermal method. The effects of Yb and Ho dopants on the crystal structures, UCL properties, and optical bandgaps of the oxides were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), UCL spectroscopy, and measurements of decay times, pump power dependence, and transmittance spectra. The crystal structures of oxide products of indium and gallium were significantly modified with RE dopants. InO and YbGaO were selected as the host materials. For Yb/Ho codoped InO NPs, there existed energy transfers from the defect states of InO to Ho and from Yb to Ho. With a fixed Ho concentration, InO:0%Yb,2%Ho NPs showed the optimal UCL properties mainly due to InO-Ho energy transfer and Ho-Yb energy-back-transfer, while with a fixed Yb concentration, InO:5%Yb,3%Ho NPs with a slight YbO impurity and YbGaO:2%Ho NPs did mainly due to Ho-Ho cross-relaxation. Besides, the optical bandgaps of InO and YbGaO were noticeably broadened with RE dopants. These findings can offer feasible directions for the synthesis and UCL fine-tuning of RE-doped oxides of indium and gallium and improve their multifunction application prospects in the fields of semiconductor and UCL nanomaterials.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1021/acs.inorgchem.4c02701 | DOI Listing |
ACS Appl Mater Interfaces
January 2025
School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
Optoelectronic devices require stable operation to detect repetitive visual information. In this study, endurable arrays based on heterojunction phototransistors composed of indium-gallium-zinc oxide (IGZO) with a low dark current and tin sulfide (SnS) capable of absorbing visible light are developed for image sensors. The tandem structure of IGZO/SnS/IGZO (ISI) enables stable operation under repetitive exposure to visible light by improving the transport ability of the photoexcited carriers through mitigated trap sites and their separation into each IGZO layer.
View Article and Find Full Text PDFCommun Eng
December 2024
EPIC, Large Area Thin-film Transistor Electronics, imec, Kapeldreef 75, 3001, Leuven, Belgium.
Commun Eng
July 2024
EPIC, Large Area Thin-film Transistor Electronics, imec, Kapeldreef 75, 3001, Leuven, Belgium.
Spiking neural network algorithms require fine-tuned neuromorphic hardware to increase their effectiveness. Such hardware, mainly digital, is typically built on mature silicon nodes. Future artificial intelligence applications will demand the execution of tasks with increasing complexity and over timescales spanning several decades.
View Article and Find Full Text PDFSmall Methods
December 2024
Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea.
This study introduces a novel method for achieving highly ordered-crystalline InGaO [0 ≤ x ≤ 0.6] thin films on Si substrates at 250 °C using plasma-enhanced atomic-layer-deposition (PEALD) with dual seed crystal layers (SCLs) of γ-AlO and ZnO. Field-effect transistors (FETs) with random polycrystalline InGaO channels (grown without SCLs) show a mobility (µFE) of 85.
View Article and Find Full Text PDFSci Rep
December 2024
School of Electrical Engineering, Kookmin University, Seoul, 02707, Republic of Korea.
This study optimizes V and ΔV in amorphous indium-gallium-zinc-oxide (a-IGZO) field-effect transistors (FETs) by examining the influence of both channel length (L) and Ga composition. It was observed that as the ratio of In: Ga: Zn changed from 1:1:1 to 0.307:0.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!