AI Article Synopsis
- Gallium oxide is a versatile wide-bandgap semiconductor used in applications like gas sensors and UV detectors.
- The paper discusses a method for creating tin-doped gallium oxide thin films using aerosol assisted chemical vapor deposition with specific chemicals.
- Results showed that doping with tin lowers the film's visible light transmittance but maintains its wide bandgap of 4.8 eV, and significantly reduces the resistivity of the films.
Article Abstract
Gallium oxide is a wide-bandgap compound semiconductor material renowned for its diverse applications spanning gas sensors, liquid crystal displays, transparent electrodes, and ultraviolet detectors. This paper details the aerosol assisted chemical vapor deposition synthesis of tin doped gallium oxide thin films using gallium acetylacetonate and monobutyltin trichloride dissolved in methanol. It was observed that Sn doping resulted in a reduction in the transmittance of GaO films within the visible spectrum, while preserving the wide bandgap characteristics of 4.8 eV. Furthermore, Hall effect testing revealed a substantial decrease in the resistivity of Sn-doped GaO films, reducing it from 4.2 × 10 Ω cm to 2 × 10 Ω cm for the 2.5 at. % Sn:GaO compared to the nominally undoped GaO.
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Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11360363 | PMC |
| http://dx.doi.org/10.1021/acsaelm.4c00973 | DOI Listing |
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