Direct Laser Writing of Micro-Nano Filters Based on Three-Photon Polymerization.

ACS Appl Mater Interfaces

Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China.

Published: September 2024

Direct laser writing (DLW) enables the manufacturing of functional quantum dot (QD)-polymer nanostructures with the special performance desired for technological applications. However, most papers fabricate the QD-polymer photoresist based on the principle of two-photon polymerization using laser wavelengths of 750-800 nm, which cannot effectively fabricate the near-infrared QD-polymer photoresist with absorption wavelengths above 800 nm due to linear absorption. Moreover, most papers report a relatively low doping concentration of QDs. To address these issues, this study introduces three-photon DLW technology using a near-infrared 1035 nm laser to effectively avoid the linear absorption of the near-infrared PbS/CdS QD-polymer photoresist. Three kinds of QD-polymer photoresists with concentrations up to 150 mg mL are prepared through surface modification of QDs. We demonstrate that three-photon DLW is feasible to fabricate high-concentration QD-polymer photoresist to produce micro/nano high-performance QD-polymer filters of visible and near-infrared light absorption. This study provides materials and process guidance for the fabrication and application of visible and near-infrared optical filters through three-photon DLW processing of various kinds of functional nanoparticles-polymer photoresist.

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http://dx.doi.org/10.1021/acsami.4c13129DOI Listing

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Direct Laser Writing of Micro-Nano Filters Based on Three-Photon Polymerization.

ACS Appl Mater Interfaces

September 2024

Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China.

Direct laser writing (DLW) enables the manufacturing of functional quantum dot (QD)-polymer nanostructures with the special performance desired for technological applications. However, most papers fabricate the QD-polymer photoresist based on the principle of two-photon polymerization using laser wavelengths of 750-800 nm, which cannot effectively fabricate the near-infrared QD-polymer photoresist with absorption wavelengths above 800 nm due to linear absorption. Moreover, most papers report a relatively low doping concentration of QDs.

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